{"_buckets": {"deposit": "81093d83-e22b-4751-b36f-b3d1b46e9313"}, "_deposit": {"id": "2442", "owners": [], "pid": {"revision_id": 0, "type": "recid", "value": "2442"}, "status": "published"}, "_oai": {"id": "oai:meral.edu.mm:recid/2442", "sets": ["user-uy"]}, "communities": ["ccm", "ccp", "kyauksetu", "ltc", "maas", "miit", "mlmu", "mmu", "mtlu", "mtu", "mub", "mude", "mufl", "pathein", "scu", "suoe", "tcu", "tgu", "tuh", "tum", "ucsm", "ucsmtla", "ucsmub", "ucspathein", "ucstaungoo", "ucsy", "udmm", "udmy", "uit", "um", "um1", "um2", "umkn", "umm", "uphy", "urj", "uvs", "uy", "yau", "ydbu", "ytu", "yude", "yueco", "yufl", "yuoe"], "control_number": "2442", "item_1583103067471": {"attribute_name": "Title", "attribute_value_mlt": [{"subitem_1551255647225": "Effect of GaP and In0.4Ga0.6P Insertion Layers on the Properties of InP Nanostructures Metal-Organic Vapor Phase Epitaxy", "subitem_1551255648112": "en"}]}, "item_1583103085720": {"attribute_name": "Description", "attribute_value_mlt": [{"interim": "The effect of increasing GaP and InGaP Insertion layers thickness (0-4) monolayers (MLs) to improve the structural and optical properties of InP self-assembled quantum dots (SAQDs) on GaAs (001) substrate grown by metal-organic vapor phase epitaxy was reported . The growth of thin GaP and InGaP insertion layers between In0.49Ga0.51P buffer and InP QDs layer reduced the mean height and size fluctuation and increased the density of InP QDs. A maximum QDs density of 4.2 x 109 cm-2 and better and smaller QDs size and uniformity had been achieved at 2 ML GaP and InGaP insertion layers. The blueshift of the PL peak was enhanced by insertion of GaP and InGaP layers. Due to InGaP insertion layer, a more blue-shift of the PL peak emission was also observed. InGaP insertion layer led to better QDs quality and higher PL intensity compare to that of GaP insertion layer."}]}, "item_1583103108160": {"attribute_name": "Keywords", "attribute_value_mlt": [{"interim": "InP"}]}, "item_1583103120197": {"attribute_name": "Files", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_access", "date": [{"dateType": "Available", "dateValue": "2020-05-05"}], "displaytype": "preview", "download_preview_message": "", "file_order": 0, "filename": "Effect of GaP and In¬0.4Ga¬0.6 insertion layers on the properties of InP Nanostructures metal-organic vapor phase Epitaxy.pdf", "filesize": [{"value": "1706 Kb"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 1706000.0, "url": {"url": "https://meral.edu.mm/record/2442/files/Effect of GaP and In¬0.4Ga¬0.6 insertion layers on the properties of InP Nanostructures metal-organic vapor phase Epitaxy.pdf"}, "version_id": "4faa7b04-108c-4f4b-b687-901bbd7a6dee"}]}, "item_1583103131163": {"attribute_name": "Journal articles", "attribute_value_mlt": [{"subitem_journal_title": "Proceeding of the Second International Conference on Science Engineering", "subitem_volume": "1"}]}, "item_1583103147082": {"attribute_name": "Conference papaers", "attribute_value_mlt": [{}]}, "item_1583103211336": {"attribute_name": "Books/reports/chapters", "attribute_value_mlt": [{}]}, "item_1583103233624": {"attribute_name": "Thesis/dissertations", "attribute_value_mlt": [{"subitem_supervisor(s)": []}]}, "item_1583105942107": {"attribute_name": "Authors", "attribute_value_mlt": [{"subitem_authors": [{"subitem_authors_fullname": "Soe Soe Han"}, {"subitem_authors_fullname": "Panyakeow, Somsak"}, {"subitem_authors_fullname": "Ratanathammaphan, Somchai"}, {"subitem_authors_fullname": "Higo, Akio"}, {"subitem_authors_fullname": "Yunpeng, Wang"}, {"subitem_authors_fullname": "Deura, Momoko"}, {"subitem_authors_fullname": "Sugiyama, Masakasu"}, {"subitem_authors_fullname": "Nakano, Yoshiaki"}]}]}, "item_1583108359239": {"attribute_name": "Upload type", "attribute_value_mlt": [{"interim": "Other"}]}, "item_1583108428133": {"attribute_name": "Publication type", "attribute_value_mlt": [{"interim": "Other"}]}, "item_1583159729339": {"attribute_name": "Publication date", "attribute_value": "2010"}, "item_1583159847033": {"attribute_name": "Identifier", "attribute_value": "https://uyr.uy.edu.mm/handle/123456789/292"}, "item_title": "Effect of GaP and In0.4Ga0.6P Insertion Layers on the Properties of InP Nanostructures Metal-Organic Vapor Phase Epitaxy", "item_type_id": "21", "owner": "1", "path": ["1582967549708"], "permalink_uri": "http://hdl.handle.net/20.500.12678/0000002442", "pubdate": {"attribute_name": "Deposited date", "attribute_value": "2020-03-05"}, "publish_date": "2020-03-05", "publish_status": "0", "recid": "2442", "relation": {}, "relation_version_is_last": true, "title": ["Effect of GaP and In0.4Ga0.6P Insertion Layers on the Properties of InP Nanostructures Metal-Organic Vapor Phase Epitaxy"], "weko_shared_id": -1}