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  1. University of Yangon
  2. Department of Physics

Effect of GaP and In0.4Ga0.6P Insertion Layers on the Properties of InP Nanostructures Metal-Organic Vapor Phase Epitaxy

http://hdl.handle.net/20.500.12678/0000002442
http://hdl.handle.net/20.500.12678/0000002442
09840b4a-852d-4ed6-b162-5bfb5a7ca7b5
81093d83-e22b-4751-b36f-b3d1b46e9313
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Effect Effect of GaP and In¬0.4Ga¬0.6 insertion layers on the properties of InP Nanostructures metal-organic vapor phase Epitaxy.pdf (1706 Kb)
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Title
Title Effect of GaP and In0.4Ga0.6P Insertion Layers on the Properties of InP Nanostructures Metal-Organic Vapor Phase Epitaxy
Language en
Publication date 2010
Authors
Soe Soe Han
Panyakeow, Somsak
Ratanathammaphan, Somchai
Higo, Akio
Yunpeng, Wang
Deura, Momoko
Sugiyama, Masakasu
Nakano, Yoshiaki
Description
The effect of increasing GaP and InGaP Insertion layers thickness (0-4) monolayers (MLs) to improve the structural and optical properties of InP self-assembled quantum dots (SAQDs) on GaAs (001) substrate grown by metal-organic vapor phase epitaxy was reported . The growth of thin GaP and InGaP insertion layers between In0.49Ga0.51P buffer and InP QDs layer reduced the mean height and size fluctuation and increased the density of InP QDs. A maximum QDs density of 4.2 x 109 cm-2 and better and smaller QDs size and uniformity had been achieved at 2 ML GaP and InGaP insertion layers. The blueshift of the PL peak was enhanced by insertion of GaP and InGaP layers. Due to InGaP insertion layer, a more blue-shift of the PL peak emission was also observed. InGaP insertion layer led to better QDs quality and higher PL intensity compare to that of GaP insertion layer.
Keywords
InP
Identifier https://uyr.uy.edu.mm/handle/123456789/292
Journal articles
Proceeding of the Second International Conference on Science Engineering
1
Conference papaers
Books/reports/chapters
Thesis/dissertations
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