{"created":"2020-03-08T23:37:35.274499+00:00","id":2442,"links":{},"metadata":{"_buckets":{"deposit":"81093d83-e22b-4751-b36f-b3d1b46e9313"},"_deposit":{"id":"2442","owners":[],"pid":{"revision_id":0,"type":"recid","value":"2442"},"status":"published"},"_oai":{"id":"oai:meral.edu.mm:recid/2442","sets":["1582963390870:1582967549708"]},"communities":["ccm","ccp","kyauksetu","ltc","maas","miit","mlmu","mmu","mtlu","mtu","mub","mude","mufl","pathein","scu","suoe","tcu","tgu","tuh","tum","ucsm","ucsmtla","ucsmub","ucspathein","ucstaungoo","ucsy","udmm","udmy","uit","um","um1","um2","umkn","umm","uphy","urj","uvs","uy","yau","ydbu","ytu","yude","yueco","yufl","yuoe"],"control_number":"2442","item_1583103067471":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_1551255647225":"Effect of GaP and In0.4Ga0.6P Insertion Layers on the Properties of InP Nanostructures Metal-Organic Vapor Phase Epitaxy","subitem_1551255648112":"en"}]},"item_1583103085720":{"attribute_name":"Description","attribute_value_mlt":[{"interim":"The effect of increasing GaP and InGaP Insertion layers thickness (0-4) monolayers (MLs) to improve the structural and optical properties of InP self-assembled quantum dots (SAQDs) on GaAs (001) substrate grown by metal-organic vapor phase epitaxy was reported . The growth of thin GaP and InGaP insertion layers between In0.49Ga0.51P buffer and InP QDs layer reduced the mean height and size fluctuation and increased the density of InP QDs. A maximum QDs density of 4.2 x 109 cm-2 and better and smaller QDs size and uniformity had been achieved at 2 ML GaP and InGaP insertion layers. The blueshift of the PL peak was enhanced by insertion of GaP and InGaP layers. Due to InGaP insertion layer, a more blue-shift of the PL peak emission was also observed. InGaP insertion layer led to better QDs quality and higher PL intensity compare to that of GaP insertion layer."}]},"item_1583103108160":{"attribute_name":"Keywords","attribute_value_mlt":[{"interim":"InP"}]},"item_1583103120197":{"attribute_name":"Files","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2020-05-05"}],"displaytype":"preview","filename":"Effect of GaP and In¬0.4Ga¬0.6 insertion layers on the properties of InP Nanostructures metal-organic vapor phase Epitaxy.pdf","filesize":[{"value":"1706 Kb"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"url":"https://meral.edu.mm/record/2442/files/Effect of GaP and In¬0.4Ga¬0.6 insertion layers on the properties of InP Nanostructures metal-organic vapor phase Epitaxy.pdf"},"version_id":"4faa7b04-108c-4f4b-b687-901bbd7a6dee"}]},"item_1583103131163":{"attribute_name":"Journal articles","attribute_value_mlt":[{"subitem_journal_title":"Proceeding of the Second International Conference on Science Engineering","subitem_volume":"1"}]},"item_1583103147082":{"attribute_name":"Conference papaers","attribute_value_mlt":[{}]},"item_1583103211336":{"attribute_name":"Books/reports/chapters","attribute_value_mlt":[{}]},"item_1583103233624":{"attribute_name":"Thesis/dissertations","attribute_value_mlt":[{"subitem_supervisor(s)":[]}]},"item_1583105942107":{"attribute_name":"Authors","attribute_value_mlt":[{"subitem_authors":[{"subitem_authors_fullname":"Soe Soe Han"},{"subitem_authors_fullname":"Panyakeow, Somsak"},{"subitem_authors_fullname":"Ratanathammaphan, Somchai"},{"subitem_authors_fullname":"Higo, Akio"},{"subitem_authors_fullname":"Yunpeng, Wang"},{"subitem_authors_fullname":"Deura, Momoko"},{"subitem_authors_fullname":"Sugiyama, Masakasu"},{"subitem_authors_fullname":"Nakano, Yoshiaki"}]}]},"item_1583108359239":{"attribute_name":"Upload type","attribute_value_mlt":[{"interim":"Other"}]},"item_1583108428133":{"attribute_name":"Publication type","attribute_value_mlt":[{"interim":"Other"}]},"item_1583159729339":{"attribute_name":"Publication date","attribute_value":"2010"},"item_1583159847033":{"attribute_name":"Identifier","attribute_value":"https://uyr.uy.edu.mm/handle/123456789/292"},"item_title":"Effect of GaP and In0.4Ga0.6P Insertion Layers on the Properties of InP Nanostructures Metal-Organic Vapor Phase Epitaxy","item_type_id":"21","owner":"1","path":["1582967549708"],"publish_date":"2020-03-05","publish_status":"0","recid":"2442","relation_version_is_last":true,"title":["Effect of GaP and In0.4Ga0.6P Insertion Layers on the Properties of InP Nanostructures Metal-Organic Vapor Phase Epitaxy"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2021-12-13T03:11:08.988770+00:00"}