{"_buckets": {"deposit": "bf808351-5287-4382-bd17-cff0b01dd7df"}, "_deposit": {"created_by": 235, "id": "9447", "owner": "235", "owners": [235], "owners_ext": {"displayname": "", "username": ""}, "pid": {"revision_id": 0, "type": "depid", "value": "9447"}, "status": "published"}, "_oai": {"id": "oai:meral.edu.mm:recid/00009447", "sets": []}, "author_link": [], "control_number": "9447", "item_1583103067471": {"attribute_name": "Title", "attribute_value_mlt": [{"subitem_1551255647225": "Electrical Characteristics of Ge-Ag Semiconductor Diode", "subitem_1551255648112": "en"}]}, "item_1583103085720": {"attribute_name": "Description", "attribute_value_mlt": [{"interim": "Abstract\nThe group I element of silver (Ag) was deposited on group IV element of n-type germanium\n(n-Ge) substrate at various heating temperatures of 700ºC, 800ºC and 900ºC. The metal\nsemiconductor junction is formed. I-V characteristics of Ge-Ag diodes without illumination and\nwith illumination were measured."}]}, "item_1583103108160": {"attribute_name": "Keywords", "attribute_value_mlt": [{"interim": "Ge-Ag diode"}, {"interim": "germanium"}, {"interim": "silver"}, {"interim": "I-V characteristics"}]}, "item_1583103120197": {"attribute_name": "Files", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_access", "date": [{"dateType": "Available", "dateValue": "2024-05-06"}], "displaytype": "preview", "download_preview_message": "", "file_order": 0, "filename": "Ohn Mar Swe (331 to 336).pdf", "filesize": [{"value": "314 KB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_0", "mimetype": "application/pdf", "size": 314000.0, "url": {"url": "https://meral.edu.mm/record/9447/files/Ohn Mar Swe (331 to 336).pdf"}, "version_id": "07cd3212-b769-41dc-bb6e-d60f401218e3"}, {"accessrole": "open_access", "date": [{"dateType": "Available", "dateValue": "2024-05-06"}], "displaytype": "preview", "download_preview_message": "", "file_order": 1, "filename": "Ohn Mar Swe (331 to 336).pdf", "filesize": [{"value": "314 KB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_0", "mimetype": "application/pdf", "size": 314000.0, "url": {"url": "https://meral.edu.mm/record/9447/files/Ohn Mar Swe (331 to 336).pdf"}, "version_id": "07cd3212-b769-41dc-bb6e-d60f401218e3"}]}, "item_1583103131163": {"attribute_name": "Journal articles", "attribute_value_mlt": [{"subitem_issue": "2022", "subitem_journal_title": "University of Yangon Research Journal 2022", "subitem_pages": "331-336", "subitem_volume": "Vol. 11, No.2"}]}, "item_1583105942107": {"attribute_name": "Authors", "attribute_value_mlt": [{"subitem_authors": [{"subitem_authors_fullname": "Ohn Mar Swe"}, {"subitem_authors_fullname": "Zin Mar Win"}, {"subitem_authors_fullname": "Khine Khine Linn"}, {"subitem_authors_fullname": "May Kalayar Kyaing"}, {"subitem_authors_fullname": "Amy Aung5"}]}]}, "item_1583108359239": {"attribute_name": "Upload type", "attribute_value_mlt": [{"interim": "Publication"}]}, "item_1583108428133": {"attribute_name": "Publication type", "attribute_value_mlt": [{"interim": "Journal article"}]}, "item_1583159729339": {"attribute_name": "Publication date", "attribute_value": "2022-12-31"}, "item_title": "Electrical Characteristics of Ge-Ag Semiconductor Diode", "item_type_id": "21", "owner": "235", "path": ["1582967549708"], "permalink_uri": "https://meral.edu.mm/records/9447", "pubdate": {"attribute_name": "Deposit date", "attribute_value": "2024-05-06"}, "publish_date": "2024-05-06", "publish_status": "0", "recid": "9447", "relation": {}, "relation_version_is_last": true, "title": ["Electrical Characteristics of Ge-Ag Semiconductor Diode"], "weko_shared_id": -1}