{"created":"2024-05-06T03:51:09.875527+00:00","id":9447,"links":{},"metadata":{"_buckets":{"deposit":"bf808351-5287-4382-bd17-cff0b01dd7df"},"_deposit":{"created_by":235,"id":"9447","owner":"235","owners":[235],"owners_ext":{"displayname":"","email":"thaungbiakpar@gmail.com","username":""},"pid":{"revision_id":0,"type":"depid","value":"9447"},"status":"published"},"_oai":{"id":"oai:meral.edu.mm:recid/00009447","sets":["1582963390870:1582967549708"]},"author_link":[],"control_number":"9447","item_1583103067471":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_1551255647225":"Electrical Characteristics of Ge-Ag Semiconductor Diode","subitem_1551255648112":"en"}]},"item_1583103085720":{"attribute_name":"Description","attribute_value_mlt":[{"interim":"Abstract\nThe group I element of silver (Ag) was deposited on group IV element of n-type germanium\n(n-Ge) substrate at various heating temperatures of 700ºC, 800ºC and 900ºC. The metal\nsemiconductor junction is formed. I-V characteristics of Ge-Ag diodes without illumination and\nwith illumination were measured."}]},"item_1583103108160":{"attribute_name":"Keywords","attribute_value_mlt":[{"interim":"Ge-Ag diode"},{"interim":"germanium"},{"interim":"silver"},{"interim":"I-V characteristics"}]},"item_1583103120197":{"attribute_name":"Files","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2024-05-06"}],"displaytype":"preview","filename":"Ohn Mar Swe (331 to 336).pdf","filesize":[{"value":"314 KB"}],"format":"application/pdf","licensetype":"license_0","mimetype":"application/pdf","url":{"url":"https://meral.edu.mm/record/9447/files/Ohn Mar Swe (331 to 336).pdf"},"version_id":"07cd3212-b769-41dc-bb6e-d60f401218e3"},{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2024-05-06"}],"displaytype":"preview","filename":"Ohn Mar Swe (331 to 336).pdf","filesize":[{"value":"314 KB"}],"format":"application/pdf","licensetype":"license_0","url":{"url":"https://meral.edu.mm/record/9447/files/Ohn Mar Swe (331 to 336).pdf"},"version_id":"07cd3212-b769-41dc-bb6e-d60f401218e3"}]},"item_1583103131163":{"attribute_name":"Journal articles","attribute_value_mlt":[{"subitem_issue":"2022","subitem_journal_title":"University of Yangon Research Journal 2022","subitem_pages":"331-336","subitem_volume":"Vol. 11, No.2"}]},"item_1583105942107":{"attribute_name":"Authors","attribute_value_mlt":[{"subitem_authors":[{"subitem_authors_fullname":"Ohn Mar Swe"},{"subitem_authors_fullname":"Zin Mar Win"},{"subitem_authors_fullname":"Khine Khine Linn"},{"subitem_authors_fullname":"May Kalayar Kyaing"},{"subitem_authors_fullname":"Amy Aung5"}]}]},"item_1583108359239":{"attribute_name":"Upload type","attribute_value_mlt":[{"interim":"Publication"}]},"item_1583108428133":{"attribute_name":"Publication type","attribute_value_mlt":[{"interim":"Journal article"}]},"item_1583159729339":{"attribute_name":"Publication date","attribute_value":"2022-12-31"},"item_title":"Electrical Characteristics of Ge-Ag Semiconductor Diode","item_type_id":"21","owner":"235","path":["1582967549708"],"publish_date":"2024-05-06","publish_status":"0","recid":"9447","relation_version_is_last":true,"title":["Electrical Characteristics of Ge-Ag Semiconductor Diode"],"weko_creator_id":"235","weko_shared_id":-1},"updated":"2024-05-06T04:22:06.814686+00:00"}