{"_buckets": {"deposit": "b4afbf8e-f544-4a8a-ae46-47f88d7c8c02"}, "_deposit": {"created_by": 103, "id": "7361", "owner": "103", "owners": [103], "owners_ext": {"displayname": "", "username": ""}, "pid": {"revision_id": 0, "type": "depid", "value": "7361"}, "status": "published"}, "_oai": {"id": "oai:meral.edu.mm:recid/00007361", "sets": ["1607987483594", "1608056914776", "user-tuh"]}, "communities": ["tuh"], "control_number": "7361", "item_1583103067471": {"attribute_name": "Title", "attribute_value_mlt": [{"subitem_1551255647225": "Analysis on Physical Characteristics of β-Ga2O3 for Schottky Barrier Diode Based Metal-Semiconductor", "subitem_1551255648112": "en"}]}, "item_1583103085720": {"attribute_name": "Description", "attribute_value_mlt": [{"interim": "The paper presents the analysis on physical characteristics of potential metal-semiconductor belta-gallium oxide (β-Ga2O3) material for Schottky barrier diode based on physical parameters. The β-Ga2O3 is one of the candidates to fabricate the Schottky barrier diode for obtaining the high performance characteristics in nature. The electron and hole concentrations, energy band-gap via temperature, breakdown electric field relationship with bandgap, J-V characteristic and breakdown voltage via doping concentration are very important physical parameters for device design. In this paper, the physical characteristics for electrical parameters for fabricating β-Ga2O3    metal-semiconductor devices are confirmed. The research finding shows that β-Ga2O3 is more suitable for power electronic devices than the other materials because it has wide bandgap, high breakdown electric field and high breakdown voltage."}]}, "item_1583103108160": {"attribute_name": "Keywords", "attribute_value_mlt": [{"interim": "Physical parameters, physical characteristics, βGa2O3, schottky barrier diode, breakdown electric field    I"}]}, "item_1583103120197": {"attribute_name": "Files", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_access", "date": [{"dateType": "Available", "dateValue": "2021-01-11"}], "displaytype": "preview", "download_preview_message": "", "file_order": 0, "filename": "Hlaing Hlaing Thin( Ec), EE-3,MTU,Nov 7-8,2019,P 10-14.pdf", "filesize": [{"value": "359 KB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_0", "mimetype": "application/pdf", "size": 359000.0, "url": {"url": "https://meral.edu.mm/record/7361/files/Hlaing Hlaing Thin( Ec), EE-3,MTU,Nov 7-8,2019,P 10-14.pdf"}, "version_id": "889818bb-5b45-41f7-b353-fc6e6eb88536"}]}, "item_1583103147082": {"attribute_name": "Conference papers", "attribute_value_mlt": [{"subitem_c_date": "2019-11-7-8", "subitem_conference_title": "The 2nd International Conference on Engineering Education and Innovation, November 7-8, 2019, Myanmar", "subitem_place": "Room- 5, Technological University ( Hmawbi ), Yangon, Myanmar", "subitem_session": "Session 1", "subitem_website": "www.hbtu.edu.mm"}]}, "item_1583105942107": {"attribute_name": "Authors", "attribute_value_mlt": [{"subitem_authors": [{"subitem_authors_fullname": "Hlaing Hlaing Thin"}, {"subitem_authors_fullname": "Than Htike Aung"}, {"subitem_authors_fullname": "Tin Tin Hla"}]}]}, "item_1583108359239": {"attribute_name": "Upload type", "attribute_value_mlt": [{"interim": "Publication"}]}, "item_1583108428133": {"attribute_name": "Publication type", "attribute_value_mlt": [{"interim": "Conference paper"}]}, "item_1583159729339": {"attribute_name": "Publication date", "attribute_value": "2019-11-07"}, "item_1583159847033": {"attribute_name": "Identifier", "attribute_value": "ISBN 978-99971-0-733-6"}, "item_title": "Analysis on Physical Characteristics of β-Ga2O3 for Schottky Barrier Diode Based Metal-Semiconductor", "item_type_id": "21", "owner": "103", "path": ["1607987483594", "1608056914776"], "permalink_uri": "http://hdl.handle.net/20.500.12678/0000007361", "pubdate": {"attribute_name": "Deposited date", "attribute_value": "2021-01-11"}, "publish_date": "2021-01-11", "publish_status": "0", "recid": "7361", "relation": {}, "relation_version_is_last": true, "title": ["Analysis on Physical Characteristics of β-Ga2O3 for Schottky Barrier Diode Based Metal-Semiconductor"], "weko_shared_id": -1}