{"created":"2021-01-11T04:23:12.472884+00:00","id":7361,"links":{},"metadata":{"_buckets":{"deposit":"b4afbf8e-f544-4a8a-ae46-47f88d7c8c02"},"_deposit":{"created_by":103,"id":"7361","owner":"103","owners":[103],"owners_ext":{"displayname":"","email":"nwaykabyar186@gmail.com","username":""},"pid":{"revision_id":0,"type":"depid","value":"7361"},"status":"published"},"_oai":{"id":"oai:meral.edu.mm:recid/00007361","sets":["1607987483594","1607987483594:1608056914776"]},"communities":["tuh"],"control_number":"7361","item_1583103067471":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_1551255647225":"Analysis on Physical Characteristics of β-Ga2O3 for Schottky Barrier Diode Based Metal-Semiconductor","subitem_1551255648112":"en"}]},"item_1583103085720":{"attribute_name":"Description","attribute_value_mlt":[{"interim":"The paper presents the analysis on physical characteristics of potential metal-semiconductor belta-gallium oxide (β-Ga2O3) material for Schottky barrier diode based on physical parameters. The β-Ga2O3 is one of the candidates to fabricate the Schottky barrier diode for obtaining the high performance characteristics in nature. The electron and hole concentrations, energy band-gap via temperature, breakdown electric field relationship with bandgap, J-V characteristic and breakdown voltage via doping concentration are very important physical parameters for device design. In this paper, the physical characteristics for electrical parameters for fabricating β-Ga2O3    metal-semiconductor devices are confirmed. The research finding shows that β-Ga2O3 is more suitable for power electronic devices than the other materials because it has wide bandgap, high breakdown electric field and high breakdown voltage."}]},"item_1583103108160":{"attribute_name":"Keywords","attribute_value_mlt":[{"interim":"Physical parameters, physical characteristics, βGa2O3, schottky barrier diode, breakdown electric field    I"}]},"item_1583103120197":{"attribute_name":"Files","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2021-01-11"}],"displaytype":"preview","filename":"Hlaing Hlaing Thin( Ec), EE-3,MTU,Nov 7-8,2019,P 10-14.pdf","filesize":[{"value":"359 KB"}],"format":"application/pdf","licensetype":"license_0","mimetype":"application/pdf","url":{"url":"https://meral.edu.mm/record/7361/files/Hlaing Hlaing Thin( Ec), EE-3,MTU,Nov 7-8,2019,P 10-14.pdf"},"version_id":"889818bb-5b45-41f7-b353-fc6e6eb88536"}]},"item_1583103147082":{"attribute_name":"Conference papers","attribute_value_mlt":[{"subitem_c_date":"2019-11-7-8","subitem_conference_title":"The 2nd International Conference on Engineering Education and Innovation, November 7-8, 2019, Myanmar","subitem_place":"Room- 5, Technological University ( Hmawbi ), Yangon, Myanmar","subitem_session":"Session 1","subitem_website":"www.hbtu.edu.mm"}]},"item_1583105942107":{"attribute_name":"Authors","attribute_value_mlt":[{"subitem_authors":[{"subitem_authors_fullname":"Hlaing Hlaing Thin"},{"subitem_authors_fullname":"Than Htike Aung"},{"subitem_authors_fullname":"Tin Tin Hla"}]}]},"item_1583108359239":{"attribute_name":"Upload type","attribute_value_mlt":[{"interim":"Publication"}]},"item_1583108428133":{"attribute_name":"Publication type","attribute_value_mlt":[{"interim":"Conference paper"}]},"item_1583159729339":{"attribute_name":"Publication date","attribute_value":"2019-11-07"},"item_1583159847033":{"attribute_name":"Identifier","attribute_value":"ISBN 978-99971-0-733-6"},"item_title":"Analysis on Physical Characteristics of β-Ga2O3 for Schottky Barrier Diode Based Metal-Semiconductor","item_type_id":"21","owner":"103","path":["1607987483594","1608056914776"],"publish_date":"2021-01-11","publish_status":"0","recid":"7361","relation_version_is_last":true,"title":["Analysis on Physical Characteristics of β-Ga2O3 for Schottky Barrier Diode Based Metal-Semiconductor"],"weko_creator_id":"103","weko_shared_id":-1},"updated":"2022-03-24T23:13:24.090763+00:00"}