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Analysis on Electrical Characteristics of Gallium Nitride (GaN) Material for Schottky Barrier Based Photodetectors

http://hdl.handle.net/20.500.12678/0000007275
90b0a1e9-7b3a-4f4b-a4fe-9c2d68fb2575
1fa31422-d25a-45dc-80de-947432aad004
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Wah Wah Wah Kyw( EC),EE-2,MTU,Nov 7-8,2019,P 6-9.pdf (293 KB)
Publication type
Conference paper
Upload type
Publication
Title
Title Analysis on Electrical Characteristics of Gallium Nitride (GaN) Material for Schottky Barrier Based Photodetectors
Language en
Publication date 2019-11-07
Authors
Wah Wah Kyw
Ohnmar Win
Tin Tin Hla
Description
This paper presents the design of a self-powered photodetector based on metal-GaN (Schottky barrier). The Schottky structure is a common structure used in wide bandgap semiconductor UV detectors. The design of Schottky barrier photodetector consists of a semitransparent Schottky contact and an Ohmic contact. Solar blind ultraviolet photodetector is mainly focoused in this research. In reality, AlGaN is suitable for solar blind ultraviolet photodetector. However, GaN is tested with various metals in this paper. Semiconductor materials are an important part of modern electronics devices for detectors, diodes, LEDs, solar cells, digital and analog ICs. GaN is the most desirable candidates for UV light detection. The simulation results of the varying energy band-gap, the electron and hole concentration and the height of Schottky barrier have been completed with the help of MATLAB.
Keywords
UV photodetectors, Metal-semiconductor junction, GaN, Doping concentration, Band-gap
Identifier ISBN 978-99971-0-733-6
Conference papers
2019-11-7-8
The 2nd International Conference on Engineering Education and Innovation,
Room - 5, Technological University ( Hmawbi ), Yangon, Myanmar
Parallel Session - 1
www.hbtu.edu.mm
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