{"created":"2021-01-07T07:17:30.513122+00:00","id":7275,"links":{},"metadata":{"_buckets":{"deposit":"1fa31422-d25a-45dc-80de-947432aad004"},"_deposit":{"created_by":103,"id":"7275","owner":"103","owners":[103],"owners_ext":{"displayname":"","email":"nwaykabyar186@gmail.com","username":""},"pid":{"revision_id":0,"type":"depid","value":"7275"},"status":"published"},"_oai":{"id":"oai:meral.edu.mm:recid/00007275","sets":["1607987483594","1607987483594:1608056914776"]},"communities":["tuh"],"item_1583103067471":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_1551255647225":"Analysis on Electrical Characteristics of Gallium Nitride (GaN) Material for Schottky Barrier Based Photodetectors","subitem_1551255648112":"en"}]},"item_1583103085720":{"attribute_name":"Description","attribute_value_mlt":[{"interim":"This paper presents the design of a self-powered photodetector based on metal-GaN (Schottky barrier). The Schottky structure is a common structure used in wide bandgap semiconductor UV detectors. The design of Schottky barrier photodetector consists of a semitransparent Schottky contact and an Ohmic contact. Solar blind ultraviolet photodetector is mainly focoused in this research. In reality, AlGaN is suitable for solar blind ultraviolet photodetector. However, GaN is tested with various metals in this paper. Semiconductor materials are an important part of modern electronics devices for detectors, diodes, LEDs, solar cells, digital and analog ICs. GaN is the most desirable candidates for UV light detection. The simulation results of the varying energy band-gap, the electron and hole concentration and the height of Schottky barrier have been completed with the help of MATLAB."}]},"item_1583103108160":{"attribute_name":"Keywords","attribute_value_mlt":[{"interim":"UV photodetectors"},{"interim":"Metal-semiconductor junction"},{"interim":"GaN"},{"interim":"Doping concentration"},{"interim":"Band-gap"}]},"item_1583103120197":{"attribute_name":"Files","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2021-01-07"}],"displaytype":"preview","filename":"Wah Wah Kyw( EC),EE-2,MTU,Nov 7-8,2019,P 6-9.pdf","filesize":[{"value":"293 KB"}],"format":"application/pdf","licensetype":"license_0","url":{"url":"https://meral.edu.mm/record/7275/files/Wah Wah Kyw( EC),EE-2,MTU,Nov 7-8,2019,P 6-9.pdf"},"version_id":"12d6fbdf-d8c0-4ab3-a0aa-4d7362d16714"}]},"item_1583103147082":{"attribute_name":"Conference papers","attribute_value_mlt":[{"subitem_c_date":"2019-11-7-8","subitem_conference_title":"The 2nd International Conference on Engineering Education and Innovation,","subitem_place":"Room - 5, Technological University ( Hmawbi ), Yangon, Myanmar","subitem_session":"Parallel  Session - 1","subitem_website":"www.hbtu.edu.mm"}]},"item_1583105942107":{"attribute_name":"Authors","attribute_value_mlt":[{"subitem_authors":[{"subitem_authors_fullname":"Wah Wah Kyw"},{"subitem_authors_fullname":"Ohnmar Win"},{"subitem_authors_fullname":"Tin Tin Hla"}]}]},"item_1583108359239":{"attribute_name":"Upload type","attribute_value_mlt":[{"interim":"Publication"}]},"item_1583108428133":{"attribute_name":"Publication type","attribute_value_mlt":[{"interim":"Conference paper"}]},"item_1583159729339":{"attribute_name":"Publication date","attribute_value":"2019-11-07"},"item_1583159847033":{"attribute_name":"Identifier","attribute_value":"ISBN 978-99971-0-733-6"},"item_title":"Analysis on Electrical Characteristics of Gallium Nitride (GaN) Material for Schottky Barrier Based Photodetectors","item_type_id":"21","owner":"103","path":["1607987483594","1608056914776"],"publish_date":"2021-01-07","publish_status":"0","recid":"7275","relation_version_is_last":true,"title":["Analysis on Electrical Characteristics of Gallium Nitride (GaN) Material for Schottky Barrier Based Photodetectors"],"weko_creator_id":"103","weko_shared_id":-1},"updated":"2022-03-24T23:11:23.616095+00:00"}