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  1. Yangon University of Education
  2. Department of Physics

Studies on La DOPED Fe2O3 Ferroelectric Thin Film Capacitors for Memory Device Applications

http://hdl.handle.net/20.500.12678/0000002986
http://hdl.handle.net/20.500.12678/0000002986
dfdd2e74-4dd6-46a7-bc20-dfcd191145c8
175e5ac8-7fda-4684-8b17-846667c718f0
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Studies Studies on La DOPED Fe2O3 Ferroelectric Thin Film Capacitors.pdf (33.2 Mb)
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Publication type
Dissertation
Upload type
Publication
Title
Title Studies on La DOPED Fe2O3 Ferroelectric Thin Film Capacitors for Memory Device Applications
Language en
Publication date 2005-04-05
Authors
Nu Nu Swe
Description
Ferroelectric memory devices of MFS design with La doped Fe0, thin films, with
different concentrations from x = 0.02 mol% to 0.1 mole % are prepared by new
liquid phase epitaxial route in which the substrate temperature was kept at 600°C
for 1 hr.
Current versus voltage characteristics, electric polarization versus
electric field characteristics and transient current versus time characteristics of
thin film capacitors are analysed. From detail analysis of the characteristics
curves and their present results in this research work implies that the fabricated
devices in all cases can be applied to nonvolatile memory devices. Particularly,
ferroelectric field effect transistor (FeFET), ferroelectric memory diode (FMD)
and ferroelectric random access memory (FeRAM) applications, have the bright
future.
Keywords
ferroelectric
Thesis/dissertations
University of Yangon
Ko Ko Kyaw Soe
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