Studies on La DOPED Fe2O3 Ferroelectric Thin Film Capacitors for Memory Device Applications

Nu Nu Swe

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Studies on La DOPED Fe2O3 Ferroelectric Thin Film Capacitors for Memory Device Applications

http://hdl.handle.net/20.500.12678/0000002986

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Publication type
		Dissertation
Upload type
		Publication
Title
	Title	Studies on La DOPED Fe2O3 Ferroelectric Thin Film Capacitors for Memory Device Applications
	Language	en
Publication date		2005-04-05
Authors
		Nu Nu Swe
Description
		Ferroelectric memory devices of MFS design with La doped Fe0, thin films, with different concentrations from x = 0.02 mol% to 0.1 mole % are prepared by new liquid phase epitaxial route in which the substrate temperature was kept at 600°C for 1 hr. Current versus voltage characteristics, electric polarization versus electric field characteristics and transient current versus time characteristics of thin film capacitors are analysed. From detail analysis of the characteristics curves and their present results in this research work implies that the fabricated devices in all cases can be applied to nonvolatile memory devices. Particularly, ferroelectric field effect transistor (FeFET), ferroelectric memory diode (FMD) and ferroelectric random access memory (FeRAM) applications, have the bright future.
Keywords
		ferroelectric
Thesis/dissertations
		University of Yangon
		Ko Ko Kyaw Soe

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