{"_buckets": {"deposit": "175e5ac8-7fda-4684-8b17-846667c718f0"}, "_deposit": {"created_by": 61, "id": "2986", "owner": "61", "owners": [61], "owners_ext": {"displayname": "", "username": ""}, "pid": {"revision_id": 0, "type": "recid", "value": "2986"}, "status": "published"}, "_oai": {"id": "oai:meral.edu.mm:recid/2986", "sets": ["user-yuoe"]}, "communities": ["yuoe"], "item_1583103067471": {"attribute_name": "Title", "attribute_value_mlt": [{"subitem_1551255647225": "Studies on La DOPED Fe2O3 Ferroelectric Thin Film Capacitors for Memory Device Applications", "subitem_1551255648112": "en"}]}, "item_1583103085720": {"attribute_name": "Description", "attribute_value_mlt": [{"interim": "Ferroelectric memory devices of MFS design with La doped Fe0, thin films, with\ndifferent concentrations from x = 0.02 mol% to 0.1 mole % are prepared by new\nliquid phase epitaxial route in which the substrate temperature was kept at 600°C\nfor 1 hr.\nCurrent versus voltage characteristics, electric polarization versus\nelectric field characteristics and transient current versus time characteristics of\nthin film capacitors are analysed. From detail analysis of the characteristics\ncurves and their present results in this research work implies that the fabricated\ndevices in all cases can be applied to nonvolatile memory devices. Particularly,\nferroelectric field effect transistor (FeFET), ferroelectric memory diode (FMD)\nand ferroelectric random access memory (FeRAM) applications, have the bright\nfuture."}]}, "item_1583103108160": {"attribute_name": "Keywords", "attribute_value_mlt": [{"interim": "ferroelectric"}]}, "item_1583103120197": {"attribute_name": "Files", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_access", "date": [{"dateType": "Available", "dateValue": "2020-08-18"}], "displaytype": "preview", "download_preview_message": "", "file_order": 0, "filename": "Studies on La DOPED Fe2O3 Ferroelectric Thin Film Capacitors.pdf", "filesize": [{"value": "33.2 Mb"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_0", "mimetype": "application/pdf", "size": 33200000.000000004, "url": {"url": "https://meral.edu.mm/record/2986/files/Studies on La DOPED Fe2O3 Ferroelectric Thin Film Capacitors.pdf"}, "version_id": "b99f0340-d597-4ec5-b16c-3b5222846e6f"}]}, "item_1583103233624": {"attribute_name": "Thesis/dissertations", "attribute_value_mlt": [{"subitem_awarding_university": "University of Yangon", "subitem_supervisor(s)": [{"subitem_supervisor": "Ko Ko Kyaw Soe"}]}]}, "item_1583105942107": {"attribute_name": "Authors", "attribute_value_mlt": [{"subitem_authors": [{"subitem_authors_fullname": "Nu Nu Swe"}]}]}, "item_1583108359239": {"attribute_name": "Upload type", "attribute_value_mlt": [{"interim": "Publication"}]}, "item_1583108428133": {"attribute_name": "Publication type", "attribute_value_mlt": [{"interim": "Dissertation "}]}, "item_1583159729339": {"attribute_name": "Publication date", "attribute_value": "2005-04-05"}, "item_title": "Studies on La DOPED Fe2O3 Ferroelectric Thin Film Capacitors for Memory Device Applications", "item_type_id": "21", "owner": "61", "path": ["1595850252716"], "permalink_uri": "http://hdl.handle.net/20.500.12678/0000002986", "pubdate": {"attribute_name": "Deposited date", "attribute_value": "2020-08-18"}, "publish_date": "2020-08-18", "publish_status": "0", "recid": "2986", "relation": {}, "relation_version_is_last": true, "title": ["Studies on La DOPED Fe2O3 Ferroelectric Thin Film Capacitors for Memory Device Applications"], "weko_shared_id": -1}