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Drain and Transfer Characteristics of Al (6 mol %) Doped PbTiO3 Thin Film Transistor

http://hdl.handle.net/20.500.12678/0000002467
34427f41-7729-4502-ba63-b8b1ca7b89ba
da92f8c6-29a5-45d1-8f56-432db583de93
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Drain Drain and Transfer Characteristics of Al.pdf (668 Kb)
Publication type
Journal article
Upload type
Publication
Title
Title Drain and Transfer Characteristics of Al (6 mol %) Doped PbTiO3 Thin Film Transistor
Language en
Publication date 2016
Authors
May Aye Khaing
Pwint Yee Thein
Than Than Win
Yin Maung Maung
Ko Ko Kyaw Soe
Description
Al doped PbTiO3 powder was firstly prepared by
high temperature solid state reaction route. Structural and
microstructural analysis were studied by X-ray diffraction (XRD)
and scanning electron microscopy (SEM)). Fabrication process of
a single-transistor type ferroelectric field effect transistor
(1TFeFET) memory with PbTi(1-x)Al(x)O3 (PTA) films had been
carried out. Electrical characteristics (drain & transfer) of all
films were measured. According to the experimental results the
laboratory-prepared transistors were utilized for 1T of
NVFRAM.
Keywords
XRD
Identifier http://uyr.uy.edu.mm/handle/123456789/63
Journal articles
Conference papaers
Books/reports/chapters
Thesis/dissertations
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