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Item
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Drain and Transfer Characteristics of Al (6 mol %) Doped PbTiO3 Thin Film Transistor
http://hdl.handle.net/20.500.12678/0000002467
http://hdl.handle.net/20.500.12678/000000246734427f41-7729-4502-ba63-b8b1ca7b89ba
da92f8c6-29a5-45d1-8f56-432db583de93
Name / File | License | Actions |
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Publication type | ||||||
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Journal article | ||||||
Upload type | ||||||
Publication | ||||||
Title | ||||||
Title | Drain and Transfer Characteristics of Al (6 mol %) Doped PbTiO3 Thin Film Transistor | |||||
Language | en | |||||
Publication date | 2016 | |||||
Authors | ||||||
May Aye Khaing | ||||||
Pwint Yee Thein | ||||||
Than Than Win | ||||||
Yin Maung Maung | ||||||
Ko Ko Kyaw Soe | ||||||
Description | ||||||
Al doped PbTiO3 powder was firstly prepared by high temperature solid state reaction route. Structural and microstructural analysis were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM)). Fabrication process of a single-transistor type ferroelectric field effect transistor (1TFeFET) memory with PbTi(1-x)Al(x)O3 (PTA) films had been carried out. Electrical characteristics (drain & transfer) of all films were measured. According to the experimental results the laboratory-prepared transistors were utilized for 1T of NVFRAM. |
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Keywords | ||||||
XRD | ||||||
Identifier | http://uyr.uy.edu.mm/handle/123456789/63 | |||||
Journal articles | ||||||
Conference papaers | ||||||
Books/reports/chapters | ||||||
Thesis/dissertations |