{"_buckets": {"deposit": "3acb220d-974e-49b6-98f8-8d8f608aef4e"}, "_deposit": {"id": "2284", "owners": [], "pid": {"revision_id": 0, "type": "recid", "value": "2284"}, "status": "published"}, "_oai": {"id": "oai:meral.edu.mm:recid/2284", "sets": ["user-uy"]}, "communities": ["ccm", "ccp", "kyauksetu", "ltc", "maas", "miit", "mlmu", "mmu", "mtlu", "mtu", "mub", "mude", "mufl", "pathein", "scu", "suoe", "tcu", "tgu", "tuh", "tum", "ucsm", "ucsmtla", "ucsmub", "ucspathein", "ucstaungoo", "ucsy", "udmm", "udmy", "uit", "um", "um1", "um2", "umkn", "umm", "uphy", "urj", "uvs", "uy", "yau", "ydbu", "ytu", "yude", "yueco", "yufl", "yuoe"], "control_number": "2284", "item_1583103067471": {"attribute_name": "Title", "attribute_value_mlt": [{"subitem_1551255647225": "Electrical Properties of Zn1-xCuxO/Si Thin Film", "subitem_1551255648112": "en"}]}, "item_1583103085720": {"attribute_name": "Description", "attribute_value_mlt": [{"interim": "As a wide band semiconductor with a large binding energy (about 60 meV) ZnO is a promising candidate semiconductor material for the next generation of optoelectronic light emission or high power and high frequency devices. Zn1-xCuxO films have been grown on Si substrate by using Thermal diffusion method. The structural properties of these films were examined by XRD. The electrical properties of these thin films are also described. In these research work, quantum yield, fill factor (Ff) and conversion efficiency (ηcon) are evaluated at different light intensities."}]}, "item_1583103108160": {"attribute_name": "Keywords", "attribute_value_mlt": [{"interim": "optoelectronic"}]}, "item_1583103120197": {"attribute_name": "Files", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_access", "date": [{"dateType": "Available", "dateValue": "2020-05-05"}], "displaytype": "preview", "download_preview_message": "", "file_order": 0, "filename": "Electrical properties of Zn1-xCuxOSi thin film .pdf", "filesize": [{"value": "2912 Kb"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 2912000.0, "url": {"url": "https://meral.edu.mm/record/2284/files/Electrical properties of Zn1-xCuxOSi thin film .pdf"}, "version_id": "48f153a2-bc13-413b-b739-85b9faea5b95"}]}, "item_1583103131163": {"attribute_name": "Journal articles", "attribute_value_mlt": [{"subitem_issue": "3", "subitem_journal_title": "Universities Research Journal (URJ)", "subitem_volume": "1"}]}, "item_1583103147082": {"attribute_name": "Conference papaers", "attribute_value_mlt": [{}]}, "item_1583103211336": {"attribute_name": "Books/reports/chapters", "attribute_value_mlt": [{}]}, "item_1583103233624": {"attribute_name": "Thesis/dissertations", "attribute_value_mlt": [{"subitem_supervisor(s)": []}]}, "item_1583105942107": {"attribute_name": "Authors", "attribute_value_mlt": [{"subitem_authors": [{"subitem_authors_fullname": "Min Maung Maung"}, {"subitem_authors_fullname": "Aye Myat Minn"}]}]}, "item_1583108359239": {"attribute_name": "Upload type", "attribute_value_mlt": [{"interim": "Publication"}]}, "item_1583108428133": {"attribute_name": "Publication type", "attribute_value_mlt": [{"interim": "Journal article"}]}, "item_1583159729339": {"attribute_name": "Publication date", "attribute_value": "2008"}, "item_1583159847033": {"attribute_name": "Identifier", "attribute_value": "https://uyr.uy.edu.mm/handle/123456789/543"}, "item_title": "Electrical Properties of Zn1-xCuxO/Si Thin Film", "item_type_id": "21", "owner": "1", "path": ["1582967549708"], "permalink_uri": "http://hdl.handle.net/20.500.12678/0000002284", "pubdate": {"attribute_name": "Deposited date", "attribute_value": "2020-03-05"}, "publish_date": "2020-03-05", "publish_status": "0", "recid": "2284", "relation": {}, "relation_version_is_last": true, "title": ["Electrical Properties of Zn1-xCuxO/Si Thin Film"], "weko_shared_id": -1}