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  1. University of Yangon
  2. Department of Physics

Electrical Properties of Zn1-xCuxO/Si Thin Film

http://hdl.handle.net/20.500.12678/0000002284
http://hdl.handle.net/20.500.12678/0000002284
271aa32f-2753-4baa-8d30-485890378dd0
3acb220d-974e-49b6-98f8-8d8f608aef4e
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Electrical Electrical properties of Zn1-xCuxOSi thin film .pdf (2912 Kb)
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Journal article
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Publication
Title
Title Electrical Properties of Zn1-xCuxO/Si Thin Film
Language en
Publication date 2008
Authors
Min Maung Maung
Aye Myat Minn
Description
As a wide band semiconductor with a large binding energy (about 60 meV) ZnO is a promising candidate semiconductor material for the next generation of optoelectronic light emission or high power and high frequency devices. Zn1-xCuxO films have been grown on Si substrate by using Thermal diffusion method. The structural properties of these films were examined by XRD. The electrical properties of these thin films are also described. In these research work, quantum yield, fill factor (Ff) and conversion efficiency (ηcon) are evaluated at different light intensities.
Keywords
optoelectronic
Identifier https://uyr.uy.edu.mm/handle/123456789/543
Journal articles
3
Universities Research Journal (URJ)
1
Conference papaers
Books/reports/chapters
Thesis/dissertations
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