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Structural and Electrical Properties of Fluorine Doped Nanocrystalline Tin Oxide Thin Film
http://hdl.handle.net/20.500.12678/0000007765
http://hdl.handle.net/20.500.12678/0000007765f8567107-9f1e-4833-9e0d-c41408e865db
125f0bc6-a2c4-4919-8631-26880d044ec0
Name / File | License | Actions |
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Khin Moh Moh Hlaing, Dr.pdf (28.7 MB)
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Publication type | ||||||
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Journal article | ||||||
Upload type | ||||||
Publication | ||||||
Title | ||||||
Title | Structural and Electrical Properties of Fluorine Doped Nanocrystalline Tin Oxide Thin Film | |||||
Language | en | |||||
Publication date | 2020-08-31 | |||||
Authors | ||||||
Khin Moh Moh Hlaing, Dr | ||||||
Hlaing Hlaing Oo, Dr | ||||||
Ni Ni Aung, Dr | ||||||
Mya Hinn Aye Khaing, Dr | ||||||
Description | ||||||
The application of thin film technology is entirely entered into all branches of science and technology. Fluorine doped tin oxide thin films belong to a special class of metal oxide thin film, nanostructure thin film solar cell. Fluorine doped tin oxide thin films prepared on glass substrate by sol-gel dip-coating method. The effect of dopant concentration of ammonium fluoride and heat treatment temperature of SnO2:F films on structural, surface morphology and electrical properties were investigated. The X-ray diffraction analysis of all SnO2:F films indicated the tetragonal structure of tin oxide with polycrystalline nature. The SEM micrographs of the SnO2:F films showed tetragonal crystal structure (flower like shape) and uniform surface pattern, at the optimized heat treated temperature 400 ºC. The best results were obtained the doping concentration of 7.5 % w/w ammonium fluoride at the heat treated temperature 400 ºC with the electrical resistance of 3.71 Ωsq-1 . | ||||||
Keywords | ||||||
SnO2:F thin film, dip-coating, tetragonal, polycrystalline | ||||||
Journal articles | ||||||
I | ||||||
Meiktila University Research Journal,2020, Vol.XI, No.1 | ||||||
220-224 | ||||||
XI |