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Structural and Electrical Properties of Fluorine Doped Nanocrystalline Tin Oxide Thin Film

http://hdl.handle.net/20.500.12678/0000007765
f8567107-9f1e-4833-9e0d-c41408e865db
125f0bc6-a2c4-4919-8631-26880d044ec0
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Khin Khin Moh Moh Hlaing, Dr.pdf (28.7 MB)
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Journal article
Upload type
Publication
Title
Title Structural and Electrical Properties of Fluorine Doped Nanocrystalline Tin Oxide Thin Film
Language en
Publication date 2020-08-31
Authors
Khin Moh Moh Hlaing, Dr
Hlaing Hlaing Oo, Dr
Ni Ni Aung, Dr
Mya Hinn Aye Khaing, Dr
Description
The application of thin film technology is entirely entered into all branches of science and technology. Fluorine doped tin oxide thin films belong to a special class of metal oxide thin film, nanostructure thin film solar cell. Fluorine doped tin oxide thin films prepared on glass substrate by sol-gel dip-coating method. The effect of dopant concentration of ammonium fluoride and heat treatment temperature of SnO2:F films on structural, surface morphology and electrical properties were investigated. The X-ray diffraction analysis of all SnO2:F films indicated the tetragonal structure of tin oxide with polycrystalline nature. The SEM micrographs of the SnO2:F films showed tetragonal crystal structure (flower like shape) and uniform surface pattern, at the optimized heat treated temperature 400 ºC. The best results were obtained the doping concentration of 7.5 % w/w ammonium fluoride at the heat treated temperature 400 ºC with the electrical resistance of 3.71 Ωsq-1 .
Keywords
SnO2:F thin film, dip-coating, tetragonal, polycrystalline
Journal articles
I
Meiktila University Research Journal,2020, Vol.XI, No.1
220-224
XI
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0
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