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  1. University of Computer Studies, Yangon
  2. Department of Natural Science

Photoelectric Properties of ZnO/Si and Ag Doped ZnO/Si Heterojunctions

http://hdl.handle.net/20.500.12678/0000004535
http://hdl.handle.net/20.500.12678/0000004535
8183b473-2d9a-4cef-b0d2-d2176213de87
5c191eb1-84b4-40fb-9868-63c8123255e0
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ICSE ICSE 2019-EN-15.pdf (418 Kb)
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Article
Upload type
Publication
Title
Title Photoelectric Properties of ZnO/Si and Ag Doped ZnO/Si Heterojunctions
Publication date 2019-12-07
Authors
Htoon, Thandar
Description
A type of semiconductor heterojunctions wasfabricated by ZnO thin film layer deposited on Si substrate.The elementary particles were examined by Energy DispersiveX-rays (EDX). X-ray Diffraction (XRD) analysis wasdescribed by structural properties of ZnO and Si layer. Thestudy of ZnO growth morphology on Si substrate wasdetermined by Scanning Electron Microscope (SEM). Then,the electrical and optical characteristics for ZnO-Si solar cellwas investigated. Thermally simulated current (TSC) and I-Vcharacteristics under different wavelengths in visible regionswere also studied. In this work, the ZnO-Si thin film layer wasindicated in photovoltaic effect. Moreover, studying silvercontact on ZnO-Si heterojunction was purposed for achievinghigher efficiency.
Keywords
heterojunctions, EDX, XRD, SEM, I-V, efficiency
Identifier http://onlineresource.ucsy.edu.mm/handle/123456789/2459
Journal articles
Proceedings of 10th International Conference on Science and Engineering 2019
Conference papers
Books/reports/chapters
Thesis/dissertations
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