-
RootNode
-
Co-operative College, Mandalay
-
Cooperative College, Phaunggyi
-
Co-operative University, Sagaing
-
Co-operative University, Thanlyin
-
Dagon University
-
Kyaukse University
-
Laquarware Technological college
-
Mandalay Technological University
-
Mandalay University of Distance Education
-
Mandalay University of Foreign Languages
-
Maubin University
-
Mawlamyine University
-
Meiktila University
-
Mohnyin University
-
Myanmar Institute of Information Technology
-
Myanmar Maritime University
-
National Management Degree College
-
Naypyitaw State Academy
-
Pathein University
-
Sagaing University
-
Sagaing University of Education
-
Taunggyi University
-
Technological University, Hmawbi
-
Technological University (Kyaukse)
-
Technological University Mandalay
-
University of Computer Studies, Mandalay
-
University of Computer Studies Maubin
-
University of Computer Studies, Meikhtila
-
University of Computer Studies Pathein
-
University of Computer Studies, Taungoo
-
University of Computer Studies, Yangon
-
University of Dental Medicine Mandalay
-
University of Dental Medicine, Yangon
-
University of Information Technology
-
University of Mandalay
-
University of Medicine 1
-
University of Medicine 2
-
University of Medicine Mandalay
-
University of Myitkyina
-
University of Public Health, Yangon
-
University of Veterinary Science
-
University of Yangon
-
West Yangon University
-
Yadanabon University
-
Yangon Technological University
-
Yangon University of Distance Education
-
Yangon University of Economics
-
Yangon University of Education
-
Yangon University of Foreign Languages
-
Yezin Agricultural University
-
New Index
-
Item
{"_buckets": {"deposit": "711dd84c-de86-4253-845c-ef5e00f48773"}, "_deposit": {"id": "2663", "owners": [], "pid": {"revision_id": 0, "type": "recid", "value": "2663"}, "status": "published"}, "_oai": {"id": "oai:meral.edu.mm:recid/2663", "sets": ["1582967549708", "user-uy"]}, "communities": ["ccm", "ccp", "kyauksetu", "ltc", "maas", "miit", "mlmu", "mmu", "mtlu", "mtu", "mub", "mude", "mufl", "pathein", "scu", "suoe", "tcu", "tgu", "tuh", "tum", "ucsm", "ucsmtla", "ucsmub", "ucspathein", "ucstaungoo", "ucsy", "udmm", "udmy", "uit", "um", "um1", "um2", "umkn", "umm", "uphy", "urj", "uvs", "uy", "yau", "ydbu", "ytu", "yude", "yueco", "yufl", "yuoe"], "control_number": "2663", "item_1583103067471": {"attribute_name": "Title", "attribute_value_mlt": [{"subitem_1551255647225": "Growth, Optical and Structural Characterization of InP Nanostructures with In0.4Ga0.6P Insertion Layer", "subitem_1551255648112": "en"}]}, "item_1583103085720": {"attribute_name": "Description", "attribute_value_mlt": [{"interim": "Quantum dots in InP/GaAs system were grown by low pressure MOVPE via the StranskiKrastanow\r growth mode. In order to control the dots diameter and improve the size uniformity and\r photoluminescence (PL) emission, the ternary In0.4Ga0.6P layers thickness (0-4) monolayers (MLs)\r were inserted. The growth of thin In0.4Ga0.6P insertion layers between In0.49Ga0.51P matrix and InP\r QD layers reduced the mean height and size fluctuation and significantly improved the uniformity\r of InP QDs. A higher QDs PL intensity, better uniformity and smaller QDs size had been achieved\r at 2 ML thickness InGaP insertion layer. The PL emission could be observed around 780 nm red\r spectral range. There was no blue-shift with increase of the In0.4Ga0.6P insertion layer thickness."}]}, "item_1583103108160": {"attribute_name": "Keywords", "attribute_value_mlt": [{"interim": "InP"}]}, "item_1583103120197": {"attribute_name": "Files", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_access", "date": [{"dateType": "Available", "dateValue": "2020-05-05"}], "displaytype": "preview", "download_preview_message": "", "file_order": 0, "filename": "Asean_Engineering Journal by Dr.Soe Soe Han.pdf", "filesize": [{"value": "352 Kb"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 352000.0, "url": {"url": "https://meral.edu.mm/record/2663/files/Asean_Engineering Journal by Dr.Soe Soe Han.pdf"}, "version_id": "815117f3-44f3-4191-9522-046553e48488"}]}, "item_1583103131163": {"attribute_name": "Journal articles", "attribute_value_mlt": [{}]}, "item_1583103147082": {"attribute_name": "Conference papaers", "attribute_value_mlt": [{}]}, "item_1583103211336": {"attribute_name": "Books/reports/chapters", "attribute_value_mlt": [{}]}, "item_1583103233624": {"attribute_name": "Thesis/dissertations", "attribute_value_mlt": [{"subitem_supervisor(s)": []}]}, "item_1583105942107": {"attribute_name": "Authors", "attribute_value_mlt": [{"subitem_authors": [{"subitem_authors_fullname": "Soe Soe Han"}, {"subitem_authors_fullname": "Panyakeow, Somsak"}, {"subitem_authors_fullname": "Ratanathammaphan, Somchai"}, {"subitem_authors_fullname": "Higo, Akio"}, {"subitem_authors_fullname": "Wang, Yunpeng"}, {"subitem_authors_fullname": "Deura, Momoko"}, {"subitem_authors_fullname": "Sugiyama, Masakasu"}, {"subitem_authors_fullname": "Nakano, Yoshiaki"}]}]}, "item_1583108359239": {"attribute_name": "Upload type", "attribute_value_mlt": [{"interim": "Publication"}]}, "item_1583108428133": {"attribute_name": "Publication type", "attribute_value_mlt": [{"interim": "Journal article"}]}, "item_1583159729339": {"attribute_name": "Publication date", "attribute_value": "2016"}, "item_1583159847033": {"attribute_name": "Identifier", "attribute_value": "http://uyr.uy.edu.mm/handle/123456789/42"}, "item_title": "Growth, Optical and Structural Characterization of InP Nanostructures with In0.4Ga0.6P Insertion Layer", "item_type_id": "21", "owner": "1", "path": ["1582967549708"], "permalink_uri": "http://hdl.handle.net/20.500.12678/0000002663", "pubdate": {"attribute_name": "Deposited date", "attribute_value": "2020-03-05"}, "publish_date": "2020-03-05", "publish_status": "0", "recid": "2663", "relation": {}, "relation_version_is_last": true, "title": ["Growth, Optical and Structural Characterization of InP Nanostructures with In0.4Ga0.6P Insertion Layer"], "weko_shared_id": -1}
Growth, Optical and Structural Characterization of InP Nanostructures with In0.4Ga0.6P Insertion Layer
http://hdl.handle.net/20.500.12678/0000002663
http://hdl.handle.net/20.500.12678/0000002663497d804c-5f01-423e-9d0e-b8200a6859d4
711dd84c-de86-4253-845c-ef5e00f48773
Name / File | License | Actions |
---|---|---|
![]() |
|
Publication type | ||||||
---|---|---|---|---|---|---|
Journal article | ||||||
Upload type | ||||||
Publication | ||||||
Title | ||||||
Title | Growth, Optical and Structural Characterization of InP Nanostructures with In0.4Ga0.6P Insertion Layer | |||||
Language | en | |||||
Publication date | 2016 | |||||
Authors | ||||||
Soe Soe Han | ||||||
Panyakeow, Somsak | ||||||
Ratanathammaphan, Somchai | ||||||
Higo, Akio | ||||||
Wang, Yunpeng | ||||||
Deura, Momoko | ||||||
Sugiyama, Masakasu | ||||||
Nakano, Yoshiaki | ||||||
Description | ||||||
Quantum dots in InP/GaAs system were grown by low pressure MOVPE via the StranskiKrastanow growth mode. In order to control the dots diameter and improve the size uniformity and photoluminescence (PL) emission, the ternary In0.4Ga0.6P layers thickness (0-4) monolayers (MLs) were inserted. The growth of thin In0.4Ga0.6P insertion layers between In0.49Ga0.51P matrix and InP QD layers reduced the mean height and size fluctuation and significantly improved the uniformity of InP QDs. A higher QDs PL intensity, better uniformity and smaller QDs size had been achieved at 2 ML thickness InGaP insertion layer. The PL emission could be observed around 780 nm red spectral range. There was no blue-shift with increase of the In0.4Ga0.6P insertion layer thickness. |
||||||
Keywords | ||||||
InP | ||||||
Identifier | http://uyr.uy.edu.mm/handle/123456789/42 | |||||
Journal articles | ||||||
Conference papaers | ||||||
Books/reports/chapters | ||||||
Thesis/dissertations |