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Item

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Growth, Optical and Structural Characterization of InP Nanostructures with In0.4Ga0.6P Insertion Layer

http://hdl.handle.net/20.500.12678/0000002663
497d804c-5f01-423e-9d0e-b8200a6859d4
711dd84c-de86-4253-845c-ef5e00f48773
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Asean_Engineering Asean_Engineering Journal by Dr.Soe Soe Han.pdf (352 Kb)
Publication type
Journal article
Upload type
Publication
Title
Title Growth, Optical and Structural Characterization of InP Nanostructures with In0.4Ga0.6P Insertion Layer
Language en
Publication date 2016
Authors
Soe Soe Han
Panyakeow, Somsak
Ratanathammaphan, Somchai
Higo, Akio
Wang, Yunpeng
Deura, Momoko
Sugiyama, Masakasu
Nakano, Yoshiaki
Description
Quantum dots in InP/GaAs system were grown by low pressure MOVPE via the StranskiKrastanow
growth mode. In order to control the dots diameter and improve the size uniformity and
photoluminescence (PL) emission, the ternary In0.4Ga0.6P layers thickness (0-4) monolayers (MLs)
were inserted. The growth of thin In0.4Ga0.6P insertion layers between In0.49Ga0.51P matrix and InP
QD layers reduced the mean height and size fluctuation and significantly improved the uniformity
of InP QDs. A higher QDs PL intensity, better uniformity and smaller QDs size had been achieved
at 2 ML thickness InGaP insertion layer. The PL emission could be observed around 780 nm red
spectral range. There was no blue-shift with increase of the In0.4Ga0.6P insertion layer thickness.
Keywords
InP
Identifier http://uyr.uy.edu.mm/handle/123456789/42
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