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Effects of Overgrowth, Growth Rate, and Capping of InAs Quantum Dots Grown on Cross-hatch Surfaces by Molecular Beam Epitaxy

http://hdl.handle.net/20.500.12678/0000002535
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98963e4e-20a4-4d65-944c-fb1296b0eac9
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Effects Effects of overgrowth, growth rate, and capping of InAs Quantum Dots grown on cross-hatch surfaces by Molecular Beam Epitaxy.pdf (3634 Kb)
Publication type
Journal article
Upload type
Publication
Title
Title Effects of Overgrowth, Growth Rate, and Capping of InAs Quantum Dots Grown on Cross-hatch Surfaces by Molecular Beam Epitaxy
Language en
Publication date 2008
Authors
Cho Cho Thet
Ko Ko Kyaw Soe
Limwongse, Teeravat
Kanjanachuchaf, Songphol
Description
The size, shape and distribution of InAs quantum dots (QDs) grown on cross-hatch InGaAs virtual substrates via molecular beam epitaxy (MBE) are investigated by systematic variations in the degree of QD overgrowth, QD growth rate and GaAs capping layer thickness. It is found that increasing overgrowth and/or growth rate, in combination with migration-enhanced epitaxy, results in the formation of uniform, high-density QDs where preferential alignment along the two orthogonal cross-hatch directions, [110] and [1-10], is maintained. Capping of QD hatch results in asymmetrical shape transformation where quantum dashes along [110] direction and wires along [1-10] can be formed on the same substrate in one continuous MBE process. The various shapes, sizes, and distributions of QD hatches provide means for engineering of optoelectronic devices.
Keywords
quantum dots
Identifier https://uyr.uy.edu.mm/handle/123456789/542
Journal articles
3
Universities Research Journal (URJ)
1
Conference papaers
Books/reports/chapters
Thesis/dissertations
0
0
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