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  1. University of Yangon
  2. Universities’Research Centre

Low-Temperature Micro-PL Measurements ofInAs Binary Quantum Dots on GaAsSubstrate

http://hdl.handle.net/20.500.12678/0000002493
http://hdl.handle.net/20.500.12678/0000002493
67131408-5a7a-4d0f-9796-731f71b8019b
3c063629-4042-43d0-b692-863cf3781ec2
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Low-temperature Low-temperature micro-PL measurements of InAs Binary Quantum dots on GaAs substrate.pdf (305 Kb)
Publication type
Journal article
Upload type
Publication
Title
Title Low-Temperature Micro-PL Measurements ofInAs Binary Quantum Dots on GaAsSubstrate
Language en
Publication date 2008
Authors
Nan Thidar Chit Swe
Suraprapapich, Suwaree
Wissawinthanon, Chanin
Panyakeow, Somsak
Tu, Charles W.
Arakawa, Yasuhiko
Description
Optical properties of InAs binary quantum dot(bi-QD) molecules grown on the (001) GaAs substrate were measured by means of temperature- andexcitation-power-dependent photoluminescence (PL)spectroscopy. It was observed that the shape and peak position of the PL spectra changed with the temperature and with the excitation power. It wa salso found that the linear polarization degree of thebi-QD PL signal changed with temperature. The temperature-dependent PL described that the linear polarization degree of bi-QDs is closely related to the carrier dynamics.
Keywords
binary quantum dot
Identifier https://uyr.uy.edu.mm/handle/123456789/717
Journal articles
2
ECTI Transactions on Electrical Engineering, Electronics, and Communications
6
Conference papaers
Books/reports/chapters
Thesis/dissertations
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