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  1. University of Yangon
  2. Department of Physics

Optical and Electrical Properties of Antimony and Fluorine Doped Tin Oxide Thin Films

http://hdl.handle.net/20.500.12678/0000002355
http://hdl.handle.net/20.500.12678/0000002355
4523c36b-cf49-4011-b2e4-411c95401f48
5915f6d6-e594-4fc0-b25c-4e875d240d26
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UJPA4-18408785.pdf UJPA4-18408785.pdf (450 Kb)
Publication type
Journal article
Upload type
Publication
Title
Title Optical and Electrical Properties of Antimony and Fluorine Doped Tin Oxide Thin Films
Language en
Publication date 2017
Authors
Saw Lin Oo
Zayar Thu
Than Zaw Oo
Pho Kaung
Description
The Sb:F:SnO2 layers (AR) were prepared by spray pyrolysis method. The anti-reflective layers (AR) heat-treated at 500°C for 30 min (solution amount 20 cc and 25 cc) have shown an improved crystallinity with crystallite size of 38-39 nm, high optical transmission of around 70 % at 450 nm. Incorporation of anti-reflective layer at cathode interface of SiO2/Si(N) devices increased the power conversion efficiency from 1.2% to 2.7% which is mainly contributed from photocurrent enhancement. The enhanced efficiency mainly contributed to the increase in Jsc. It is attributed to enhanced light absorption and better charge transport in the SiO2/Si (N) device with Sb:F:SnO2 AR layer. Results of optical and electrical studies show that the films are well suited for thin film solar cell as a window layer.
Keywords
Anti-reflective Layer (AR)
Identifier http://uyr.uy.edu.mm/handle/123456789/212
Journal articles
Universal Journal of Physics and Application
Conference papaers
Books/reports/chapters
Thesis/dissertations
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