{"_buckets": {"deposit": "0f95a55a-af23-4eb4-8559-386d1bc8904e"}, "_deposit": {"id": "2328", "owners": [], "pid": {"revision_id": 0, "type": "recid", "value": "2328"}, "status": "published"}, "_oai": {"id": "oai:meral.edu.mm:recid/2328", "sets": ["user-uy"]}, "communities": ["ccm", "ccp", "kyauksetu", "ltc", "maas", "miit", "mlmu", "mmu", "mtlu", "mtu", "mub", "mude", "mufl", "pathein", "scu", "suoe", "tcu", "tgu", "tuh", "tum", "ucsm", "ucsmtla", "ucsmub", "ucspathein", "ucstaungoo", "ucsy", "udmm", "udmy", "uit", "um", "um1", "um2", "umkn", "umm", "uphy", "urj", "uvs", "uy", "yau", "ydbu", "ytu", "yude", "yueco", "yufl", "yuoe"], "control_number": "2328", "item_1583103067471": {"attribute_name": "Title", "attribute_value_mlt": [{"subitem_1551255647225": "Study on Ferroelectric Properties of TiO2 / SiO2 /p-Si (Metal/ Ferroelectric/ Insulator/Semiconductor) Thin Films", "subitem_1551255648112": "en"}]}, "item_1583103085720": {"attribute_name": "Description", "attribute_value_mlt": [{"interim": "Fabrication of TiO2 / SiO2 /p-Si (Metal/ Ferroelectric/ Insulator/Semiconductor) thin films, deposited by liquid phase epitaxial growth method is presented. Samples are heated at 500°C, 550°C, 600°C, 650oC and 700°C each for 1hr respectively. The ferroelectric properties such as the remanent polarization Ps, the spontaneous polarization ps the coercive field Ec and the memory windows (MW) of thin films are studied."}]}, "item_1583103108160": {"attribute_name": "Keywords", "attribute_value_mlt": [{"interim": "remanent polarization"}]}, "item_1583103120197": {"attribute_name": "Files", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_access", "date": [{"dateType": "Available", "dateValue": "2020-05-05"}], "displaytype": "preview", "download_preview_message": "", "file_order": 0, "filename": "Study on Ferroelectric properties of TiO2SiO2p-Si (MetalFerroelectricInsulatorSemiconductor) thin films.pdf", "filesize": [{"value": "3575 Kb"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 3575000.0, "url": {"url": "https://meral.edu.mm/record/2328/files/Study on Ferroelectric properties of TiO2SiO2p-Si (MetalFerroelectricInsulatorSemiconductor) thin films.pdf"}, "version_id": "aadad631-7fa5-446c-bb56-5bfe61fe2f9a"}]}, "item_1583103131163": {"attribute_name": "Journal articles", "attribute_value_mlt": [{"subitem_issue": "3", "subitem_journal_title": "Universities Research Journal (URJ)", "subitem_volume": "1"}]}, "item_1583103147082": {"attribute_name": "Conference papaers", "attribute_value_mlt": [{}]}, "item_1583103211336": {"attribute_name": "Books/reports/chapters", "attribute_value_mlt": [{}]}, "item_1583103233624": {"attribute_name": "Thesis/dissertations", "attribute_value_mlt": [{"subitem_supervisor(s)": []}]}, "item_1583105942107": {"attribute_name": "Authors", "attribute_value_mlt": [{"subitem_authors": [{"subitem_authors_fullname": "MayYeeThein"}, {"subitem_authors_fullname": "Yin Yin Thein"}, {"subitem_authors_fullname": "Than Than Win"}, {"subitem_authors_fullname": "Ko Ko Kyaw Soe"}]}]}, "item_1583108359239": {"attribute_name": "Upload type", "attribute_value_mlt": [{"interim": "Publication"}]}, "item_1583108428133": {"attribute_name": "Publication type", "attribute_value_mlt": [{"interim": "Journal article"}]}, "item_1583159729339": {"attribute_name": "Publication date", "attribute_value": "2008"}, "item_1583159847033": {"attribute_name": "Identifier", "attribute_value": "https://uyr.uy.edu.mm/handle/123456789/556"}, "item_title": "Study on Ferroelectric Properties of TiO2 / SiO2 /p-Si (Metal/ Ferroelectric/ Insulator/Semiconductor) Thin Films", "item_type_id": "21", "owner": "1", "path": ["1582967549708"], "permalink_uri": "http://hdl.handle.net/20.500.12678/0000002328", "pubdate": {"attribute_name": "Deposited date", "attribute_value": "2020-03-05"}, "publish_date": "2020-03-05", "publish_status": "0", "recid": "2328", "relation": {}, "relation_version_is_last": true, "title": ["Study on Ferroelectric Properties of TiO2 / SiO2 /p-Si (Metal/ Ferroelectric/ Insulator/Semiconductor) Thin Films"], "weko_shared_id": -1}