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Study on Ferroelectric Properties of TiO2 / SiO2 /p-Si (Metal/ Ferroelectric/ Insulator/Semiconductor) Thin Films

http://hdl.handle.net/20.500.12678/0000002328
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0f95a55a-af23-4eb4-8559-386d1bc8904e
None
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Study Study on Ferroelectric properties of TiO2SiO2p-Si (MetalFerroelectricInsulatorSemiconductor) thin films.pdf (3575 Kb)
Publication type
Journal article
Upload type
Publication
Title
Title Study on Ferroelectric Properties of TiO2 / SiO2 /p-Si (Metal/ Ferroelectric/ Insulator/Semiconductor) Thin Films
Language en
Publication date 2008
Authors
MayYeeThein
Yin Yin Thein
Than Than Win
Ko Ko Kyaw Soe
Description
Fabrication of TiO2 / SiO2 /p-Si (Metal/ Ferroelectric/ Insulator/Semiconductor) thin films, deposited by liquid phase epitaxial growth method is presented. Samples are heated at 500°C, 550°C, 600°C, 650oC and 700°C each for 1hr respectively. The ferroelectric properties such as the remanent polarization Ps, the spontaneous polarization ps the coercive field Ec and the memory windows (MW) of thin films are studied.
Keywords
remanent polarization
Identifier https://uyr.uy.edu.mm/handle/123456789/556
Journal articles
3
Universities Research Journal (URJ)
1
Conference papaers
Books/reports/chapters
Thesis/dissertations
0
0
views
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