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Influence of Ultra-thin GaP Insertion Layer on the Structural of InP Quantum Dots Grown by Solid-source Molecular Beam Epitaxy
http://hdl.handle.net/20.500.12678/0000002313
http://hdl.handle.net/20.500.12678/000000231341d5fa20-f3e1-41dd-aa6d-645ffa0f2304
6ab49cb3-132c-412b-a940-92912cfad1e2
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Influence of Ultrathin Gap Insertion by Dr.Soe Soe Han.pdf (1099 Kb)
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Conference paper | ||||||
Upload type | ||||||
Publication | ||||||
Title | ||||||
Title | Influence of Ultra-thin GaP Insertion Layer on the Structural of InP Quantum Dots Grown by Solid-source Molecular Beam Epitaxy | |||||
Language | en | |||||
Publication date | 2009 | |||||
Authors | ||||||
Soe Soe Han | ||||||
Panyakeow, Somsak | ||||||
Ratanathammaphan, Somchai | ||||||
Description | ||||||
A systematic study on the effect of GaP insertion layer on the structural properties of InP quantum dots (QDs) was investigated. All samples were grown by conventional solid-source molecular beam epitaxy using a GaP decomposition cell was used as P2 source for P-based materials. The density of InP QDs directly grown on In0.48Ga0.52P layer was 4.8×1010 cm-2, and decreased to 2.4-3.9×1010 cm-2 on GaP insertion layers which depended on the thickness of GaP layer. The effect of GaP insertion layer on the size distribution of InP QDs was also studied in this work. |
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Keywords | ||||||
GaP | ||||||
Identifier | http://uyr.uy.edu.mm/handle/123456789/43 | |||||
Journal articles | ||||||
Conference papaers | ||||||
Books/reports/chapters | ||||||
Thesis/dissertations |