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  1. University of Yangon
  2. Department of Physics

Influence of Ultra-thin GaP Insertion Layer on the Structural of InP Quantum Dots Grown by Solid-source Molecular Beam Epitaxy

http://hdl.handle.net/20.500.12678/0000002313
http://hdl.handle.net/20.500.12678/0000002313
41d5fa20-f3e1-41dd-aa6d-645ffa0f2304
6ab49cb3-132c-412b-a940-92912cfad1e2
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Influence Influence of Ultrathin Gap Insertion by Dr.Soe Soe Han.pdf (1099 Kb)
Publication type
Conference paper
Upload type
Publication
Title
Title Influence of Ultra-thin GaP Insertion Layer on the Structural of InP Quantum Dots Grown by Solid-source Molecular Beam Epitaxy
Language en
Publication date 2009
Authors
Soe Soe Han
Panyakeow, Somsak
Ratanathammaphan, Somchai
Description
A systematic study on the effect of GaP insertion layer on the
structural properties of InP quantum dots (QDs) was investigated. All
samples were grown by conventional solid-source molecular beam
epitaxy using a GaP decomposition cell was used as P2 source for P-based
materials. The density of InP QDs directly grown on In0.48Ga0.52P layer
was 4.8×1010 cm-2, and decreased to 2.4-3.9×1010 cm-2 on GaP insertion
layers which depended on the thickness of GaP layer. The effect of GaP
insertion layer on the size distribution of InP QDs was also studied in this
work.
Keywords
GaP
Identifier http://uyr.uy.edu.mm/handle/123456789/43
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Conference papaers
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Thesis/dissertations
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