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Growth of Sol-Gel Derived Lead Titanate Thin Film for Non-Volatile Memory Device Application
http://hdl.handle.net/20.500.12678/0000002269
http://hdl.handle.net/20.500.12678/0000002269f0aa0a91-7169-4aa7-bb2d-4e0681ee8114
ad0778a5-976d-494c-9437-fed3e1b51697
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Growth of Sol-Gel derived Lead Titanate Thin film for Non-Volatile memory device application.pdf (3682 Kb)
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Journal article | ||||||
Upload type | ||||||
Publication | ||||||
Title | ||||||
Title | Growth of Sol-Gel Derived Lead Titanate Thin Film for Non-Volatile Memory Device Application | |||||
Language | en | |||||
Publication date | 2008 | |||||
Authors | ||||||
Khin Moe Thant | ||||||
Yin Maung Maung | ||||||
Description | ||||||
Sol-gel derived lead titanate transparent sol is firstly prepared from lead acetate trihydrate and titanium isopropoxide as starting materials. It is refluxed with Oil-bath at 110ºC for 6 h and lead titanate sol-gel is formed. Dynamic viscosity measurement is carried out by viscometer. The precursor sol is deposited on defect-free and highly polished p-Si substrate by local-made spin -coating machine. Scanning Electron Microscopy (SEM) analysis is carried out to examine the microstructural properties of fabricated film. Before the contact process, front and counter metallizations are done. 100 kHz C-V characteristics is observed by LCR meter (Digital Impedance Analyzar: Quch Tech: 1730) and gives the memory function. 100 kHz P-E hysteresis loop is also measured by Sawyer - Tower circuit. Hysteresis parameters such as spontaneous polarization density, remanent polarization density and coercive field are evaluated. | ||||||
Keywords | ||||||
C-V characteristics | ||||||
Identifier | https://uyr.uy.edu.mm/handle/123456789/548 | |||||
Journal articles | ||||||
3 | ||||||
Universities Research Journal (URJ) | ||||||
1 | ||||||
Conference papaers | ||||||
Books/reports/chapters | ||||||
Thesis/dissertations |