{"_buckets": {"deposit": "592a0107-24ae-46f6-9775-e73cd93bc3d4"}, "_deposit": {"id": "2255", "owners": [], "pid": {"revision_id": 0, "type": "recid", "value": "2255"}, "status": "published"}, "_oai": {"id": "oai:meral.edu.mm:recid/2255", "sets": ["user-uy"]}, "communities": ["ccm", "ccp", "kyauksetu", "ltc", "maas", "miit", "mlmu", "mmu", "mtlu", "mtu", "mub", "mude", "mufl", "pathein", "scu", "suoe", "tcu", "tgu", "tuh", "tum", "ucsm", "ucsmtla", "ucsmub", "ucspathein", "ucstaungoo", "ucsy", "udmm", "udmy", "uit", "um", "um1", "um2", "umkn", "umm", "uphy", "urj", "uvs", "uy", "yau", "ydbu", "ytu", "yude", "yueco", "yufl", "yuoe"], "control_number": "2255", "item_1583103067471": {"attribute_name": "Title", "attribute_value_mlt": [{"subitem_1551255647225": "Effect of GaP and In0.4Ga0.6P Insertion Layers on the Properties of InP Nanostructures Metal-Organic Vapor Phase Epitaxy", "subitem_1551255648112": "en"}]}, "item_1583103085720": {"attribute_name": "Description", "attribute_value_mlt": [{"interim": "The effect of increasing GaP and InGaP insertion\r layers thickness (0-4) monolayers (MLs) to improve the\r structural and optical properties of InP self-assembled quantum\r dots (SAQDs) on GaAs (001) substrate grown by metal-organic\r vapor phase epitaxy was reported. The growth of thin GaP and\r InGaP insertion layers between In0.49Ga0.51P buffer and InP\r QDs layer reduced the mean height and size fluctuation and\r increased the density of InP QDs. A maximum QDs density of\r 4.2 × 109\r cm-2 and better and smaller QDs size and uniformity\r had been achieved at 2 ML GaP and InGaP insertion layers. The\r blue-shift of the PL peak was enhanced by insertion of GaP and\r InGaP layers. Due to InGaP insertion layer, a more blue-shift of\r the PL peak emission was also observed. InGaP insertion layer\r led to better QDs quality and higher PL intensity compare to that\r of GaP insertion layer."}]}, "item_1583103108160": {"attribute_name": "Keywords", "attribute_value_mlt": [{"interim": "InP"}]}, "item_1583103120197": {"attribute_name": "Files", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_access", "date": [{"dateType": "Available", "dateValue": "2020-05-05"}], "displaytype": "preview", "download_preview_message": "", "file_order": 0, "filename": "Effect of GaP and In0.4Ga0.6P Insertion by Dr.Soe Soe Han.pdf", "filesize": [{"value": "2289 Kb"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 2289000.0, "url": {"url": "https://meral.edu.mm/record/2255/files/Effect of GaP and In0.4Ga0.6P Insertion by Dr.Soe Soe Han.pdf"}, "version_id": "9114fb8f-609f-47f8-8f71-ddcd719f23a6"}]}, "item_1583103131163": {"attribute_name": "Journal articles", "attribute_value_mlt": [{}]}, "item_1583103147082": {"attribute_name": "Conference papaers", "attribute_value_mlt": [{}]}, "item_1583103211336": {"attribute_name": "Books/reports/chapters", "attribute_value_mlt": [{}]}, "item_1583103233624": {"attribute_name": "Thesis/dissertations", "attribute_value_mlt": [{"subitem_supervisor(s)": []}]}, "item_1583105942107": {"attribute_name": "Authors", "attribute_value_mlt": [{"subitem_authors": [{"subitem_authors_fullname": "Soe Soe Han"}, {"subitem_authors_fullname": "Panyakeow, Somsak"}, {"subitem_authors_fullname": "Ratanathammaphan, Somchai"}, {"subitem_authors_fullname": "Higo, Akio"}, {"subitem_authors_fullname": "Yunpeng, Wang"}, {"subitem_authors_fullname": "Deura, Momoko"}, {"subitem_authors_fullname": "Sugiyama, Masakasu"}, {"subitem_authors_fullname": "Nakano, Yoshiaki"}]}]}, "item_1583108359239": {"attribute_name": "Upload type", "attribute_value_mlt": [{"interim": "Publication"}]}, "item_1583108428133": {"attribute_name": "Publication type", "attribute_value_mlt": [{"interim": "Conference paper"}]}, "item_1583159729339": {"attribute_name": "Publication date", "attribute_value": "2010"}, "item_1583159847033": {"attribute_name": "Identifier", "attribute_value": "http://uyr.uy.edu.mm/handle/123456789/44"}, "item_title": "Effect of GaP and In0.4Ga0.6P Insertion Layers on the Properties of InP Nanostructures Metal-Organic Vapor Phase Epitaxy", "item_type_id": "21", "owner": "1", "path": ["1582967549708"], "permalink_uri": "http://hdl.handle.net/20.500.12678/0000002255", "pubdate": {"attribute_name": "Deposited date", "attribute_value": "2020-03-05"}, "publish_date": "2020-03-05", "publish_status": "0", "recid": "2255", "relation": {}, "relation_version_is_last": true, "title": ["Effect of GaP and In0.4Ga0.6P Insertion Layers on the Properties of InP Nanostructures Metal-Organic Vapor Phase Epitaxy"], "weko_shared_id": -1}