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The Effect of Thin Gap Insertion Layer On Inp Nanostructure Grown by Metal–Organic Vapour Phase Epitaxy

http://hdl.handle.net/20.500.12678/0000002253
68d917de-2226-4937-a9c2-7b101123c0a0
60176898-70d2-4bee-b748-abc4d2d3b27d
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The The Effect of Thin Gap Insertion Layer On Inp by Dr.Soe Soe Han.pdf (273 Kb)
Publication type
Journal article
Upload type
Publication
Title
Title The Effect of Thin Gap Insertion Layer On Inp Nanostructure Grown by Metal–Organic Vapour Phase Epitaxy
Language en
Publication date 2012
Authors
Soe Soe Han
Panyakeow, Somsak
Ratanathammaphan, Somchai
Higo, Akio
Yunpeng, Wang
Deura, Momoko
Sugiyama, Masakasu
Nakano, Yoshiaki
Description
The effect of thin GaP insertion layers on the structural and optical properties of InP/In0.49Ga0.51P self-assembled quantum dots (SAQDs) on GaAs
(001) substrate grown by metal–organic vapour phase epitaxy has been reported. The properties of InP/In0.49Ga0.51P SAQDs are modified when
a thin (1–4 ML) GaP layer is inserted underneath the InP quantum dots (QDs). Deposition of the GaP insertion layer affects the dot dimension
and improves the size uniformity. The density, dimension and uniformity of InP QDs strongly depend on the GaP insertion layer thickness. This
variation in QD size is a result of a material nucleation effect caused by atomic intermixing between the InP QDs and underlying GaP insertion
layer and surface energy. The insertion of GaP layer led to tuning the emission wavelength and narrowing of full width at half maximum (FWHM)
when they are characterised by PL measurements at room temperature.
Keywords
InP
Identifier http://uyr.uy.edu.mm/handle/123456789/41
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