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The as-synthesized SnO2 colloids were centrifuged and dried at 60 °C for 24 h. The crystal structure of the prepared samples was examined by X-ray diffraction (XRD) which reveals the structure of SnO2 NPs was tetragonal structure. The average crystallite size of SnO2 was about 25 nm. The surface morphology of the agglomerated SnO2 was almost spherical shape by scanning electron microscope (SEM). The effect of annealing temperature of the sample was confirmed by Fourier transform infrared spectrophotometer (FTIR). The as-synthesized SnO2 layers were deposited onto a polycrystalline p-Si (100) wafer by screen printing method and SnO2/Si thin films were carried out by thermal diffusion method at different deposition temperatures 400, 500, 600, 700 and 800 °C for 1 hour (h). The structural characterization of SnO2/Si junction was observed by XRD. The photovoltaic properties of SnO2/Si were measured by LUX meter and FLUKE 45 dual display multimeter respectively. The photovoltaic parameters including resistance, voltage and current of SnO2/Si thin film were measured depending on the light intensities. 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Light Trapping Effect of SnO2 Nanoparticles for Solar Cell Application
http://hdl.handle.net/20.500.12678/0000002146
http://hdl.handle.net/20.500.12678/0000002146d39ed275-5190-4b1f-bd3f-bb4a3f71b627
4e25fff9-cd49-4cae-8f84-20e95bbf0f98
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Light Trapping Effect of SnO2 Nanoparticles for solar cell application.pdf (285 Kb)
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Journal article | ||||||
Upload type | ||||||
Publication | ||||||
Title | ||||||
Title | Light Trapping Effect of SnO2 Nanoparticles for Solar Cell Application | |||||
Language | en | |||||
Publication date | 2014 | |||||
Authors | ||||||
Cho Cho Thet | ||||||
Hla Toe | ||||||
Cho Cho | ||||||
Aye Aye Myint | ||||||
Description | ||||||
Chemical synthesis of SnO2 nanoparticles (NPs) were prepared by co-precipitation method using the stannous chloride (SnCl2.2H2O) as a precursor and ammonia solution as a precipitating agent. The as-synthesized SnO2 colloids were centrifuged and dried at 60 °C for 24 h. The crystal structure of the prepared samples was examined by X-ray diffraction (XRD) which reveals the structure of SnO2 NPs was tetragonal structure. The average crystallite size of SnO2 was about 25 nm. The surface morphology of the agglomerated SnO2 was almost spherical shape by scanning electron microscope (SEM). The effect of annealing temperature of the sample was confirmed by Fourier transform infrared spectrophotometer (FTIR). The as-synthesized SnO2 layers were deposited onto a polycrystalline p-Si (100) wafer by screen printing method and SnO2/Si thin films were carried out by thermal diffusion method at different deposition temperatures 400, 500, 600, 700 and 800 °C for 1 hour (h). The structural characterization of SnO2/Si junction was observed by XRD. The photovoltaic properties of SnO2/Si were measured by LUX meter and FLUKE 45 dual display multimeter respectively. The photovoltaic parameters including resistance, voltage and current of SnO2/Si thin film were measured depending on the light intensities. It was found out that the annealing temperature 500 °C was the optimum temperature for the better trapping properties for light intensities of SnO2 thin film. | ||||||
Keywords | ||||||
Solar Cell Application | ||||||
Identifier | http://uyr.uy.edu.mm/handle/123456789/230 | |||||
Journal articles | ||||||
Transactions on GIGAKU | ||||||
2(2) | ||||||
Conference papaers | ||||||
Books/reports/chapters | ||||||
Thesis/dissertations |