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  1. University of Yangon
  2. Department of Physics

The Effect of Thin Gap Insertion Layer on INP Nanostructures by Metal-Organic Vapor Phase Epitaxy

http://hdl.handle.net/20.500.12678/0000002109
http://hdl.handle.net/20.500.12678/0000002109
7cbb168c-332c-4dab-9620-b6b31623c345
ed5bc9af-6002-4d8d-81b7-0f7dae393865
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THE THE EFFECT OF THIN GAP INSERTION LAYER(Nano Thailand-2010) by Dr.Soe Soe Han.pdf (179 Kb)
Publication type
Journal article
Upload type
Publication
Title
Title The Effect of Thin Gap Insertion Layer on INP Nanostructures by Metal-Organic Vapor Phase Epitaxy
Language en
Publication date 2010
Authors
Ratanathammaphan, Somchai
Higo, Akio
Yunpeng, Wang
Soe Soe Han
Panyakeow, Somsak
Deura, Momoko
Sugiyama, Masakasu
Nakano, Yoshiaki
Description
The influence of thin GaP insertion layers (0 – 4) monolayers (MLs) on the
properties of InP self-assembled quantum dots (SAQDs) embedded in
In0.49Ga0.51P on GaAs (001) substrate grown by metal-organic vapor phase
epitaxy was reported. The growth of thin GaP insertion layer between
In0.49Ga0.51P buffer and InP QDs layer reduced the mean height and size
fluctuation and slightly increased the density of InP QDs. A maximum QDs
density of 4.2 × 109
cm-2 and smaller QDs size and better uniformity had been
achieved at 2 ML GaP insertion layer. The blue-shift of the PL peak was
enhanced with thicker GaP insertion layer. A blue-shift of the peak emission
wavelength of InP QDs from 814 nm to 780 nm was also observed as the
GaP insertion layer thickness from 0 ML to 2 ML but there was no further
blue-shift with further increase of the GaP insertion layer thickness.
Keywords
InP
Identifier http://uyr.uy.edu.mm/handle/123456789/46
Journal articles
Conference papaers
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Thesis/dissertations
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