Index Link

  • RootNode

Item

{"_buckets": {"deposit": "a4e39b9a-5be6-46f8-bdec-faf89ce71000"}, "_deposit": {"id": "2060", "owners": [], "pid": {"revision_id": 0, "type": "recid", "value": "2060"}, "status": "published"}, "_oai": {"id": "oai:meral.edu.mm:recid/2060", "sets": ["1582967549708", "user-uy"]}, "communities": ["ccm", "ccp", "kyauksetu", "ltc", "maas", "miit", "mlmu", "mmu", "mtlu", "mtu", "mub", "mude", "mufl", "pathein", "scu", "suoe", "tcu", "tgu", "tuh", "tum", "ucsm", "ucsmtla", "ucsmub", "ucspathein", "ucstaungoo", "ucsy", "udmm", "udmy", "uit", "um", "um1", "um2", "umkn", "umm", "uphy", "urj", "uvs", "uy", "yau", "ydbu", "ytu", "yude", "yueco", "yufl", "yuoe"], "control_number": "2060", "item_1583103067471": {"attribute_name": "Title", "attribute_value_mlt": [{"subitem_1551255647225": "Growth and Characteristics of C8-BTBT Layer on C-Sapphire Substrate by Thermal Evaporation", "subitem_1551255648112": "en"}]}, "item_1583103085720": {"attribute_name": "Description", "attribute_value_mlt": [{"interim": "The organic semiconductor 2,7-dioctyl[1] benzothieno [3,2-b][1] benzothiophene (C8-BTBT) is deposited on a single crystal (0001) Al2O3 (C-sapphire) by a vacuum thermal evaporation, and effects of the layer thickness and preparation temperature on structural, morphological, optical, and electrical characteristics are investigated with X-ray diffraction, atomic force microscopy observation, optical absorption measurement, and resistivity measurement with and without light irradiation. The C8-BTBT layers possess the (001) out-of-plane orientation irrespective of the layer thickness and preparation temperature. The C8-BTBT grains are growing up in direction parallel to the substrate surface keeping almost constant height, and the continuous layer is formed by the coalescence of the C8-BTBT grains. The grain size of the continuous C8-BTBT layer increases with raise in preparation temperature. The optical band gap energy could be estimated to be 3.32–3.35 eV regardless of the layer thickness and preparation temperature. The electrical resistivity decreases from 2.1x106 to 1.2x102Ωcm with increase in the preparation temperature due to the increase in the grain size, and the light irradiation induce the drastical decrease to 42–28Ωcm."}]}, "item_1583103108160": {"attribute_name": "Keywords", "attribute_value_mlt": [{"interim": "C8-BTBT"}]}, "item_1583103120197": {"attribute_name": "Files", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_access", "date": [{"dateType": "Available", "dateValue": "2020-05-05"}], "displaytype": "preview", "download_preview_message": "", "file_order": 0, "filename": "pssa.201700862.pdf", "filesize": [{"value": "820 Kb"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 820000.0, "url": {"url": "https://meral.edu.mm/record/2060/files/pssa.201700862.pdf"}, "version_id": "4aa2d014-c041-4c66-ae1d-c0699a585fb8"}]}, "item_1583103131163": {"attribute_name": "Journal articles", "attribute_value_mlt": [{"subitem_journal_title": "Physics Status Solidi"}]}, "item_1583103147082": {"attribute_name": "Conference papaers", "attribute_value_mlt": [{}]}, "item_1583103211336": {"attribute_name": "Books/reports/chapters", "attribute_value_mlt": [{}]}, "item_1583103233624": {"attribute_name": "Thesis/dissertations", "attribute_value_mlt": [{"subitem_supervisor(s)": []}]}, "item_1583105942107": {"attribute_name": "Authors", "attribute_value_mlt": [{"subitem_authors": [{"subitem_authors_fullname": "Aye Myint Moh"}, {"subitem_authors_fullname": "Khoo, Pei Loon"}, {"subitem_authors_fullname": "Sasaki, Kimihiro"}, {"subitem_authors_fullname": "Watase, Seiji"}, {"subitem_authors_fullname": "Shinagawa, Tsutomu"}, {"subitem_authors_fullname": "Izaki, Masanobu"}]}]}, "item_1583108359239": {"attribute_name": "Upload type", "attribute_value_mlt": [{"interim": "Publication"}]}, "item_1583108428133": {"attribute_name": "Publication type", "attribute_value_mlt": [{"interim": "Journal article"}]}, "item_1583159729339": {"attribute_name": "Publication date", "attribute_value": "2018"}, "item_1583159847033": {"attribute_name": "Identifier", "attribute_value": "https://uyr.uy.edu.mm/handle/123456789/626"}, "item_title": "Growth and Characteristics of C8-BTBT Layer on C-Sapphire Substrate by Thermal Evaporation", "item_type_id": "21", "owner": "1", "path": ["1582967549708"], "permalink_uri": "http://hdl.handle.net/20.500.12678/0000002060", "pubdate": {"attribute_name": "Deposited date", "attribute_value": "2020-03-05"}, "publish_date": "2020-03-05", "publish_status": "0", "recid": "2060", "relation": {}, "relation_version_is_last": true, "title": ["Growth and Characteristics of C8-BTBT Layer on C-Sapphire Substrate by Thermal Evaporation"], "weko_shared_id": -1}

Growth and Characteristics of C8-BTBT Layer on C-Sapphire Substrate by Thermal Evaporation

http://hdl.handle.net/20.500.12678/0000002060
aaad0dfb-fdad-4c91-8bb7-a5c8bdae8caf
a4e39b9a-5be6-46f8-bdec-faf89ce71000
None
Name / File License Actions
pssa.201700862.pdf pssa.201700862.pdf (820 Kb)
Publication type
Journal article
Upload type
Publication
Title
Title Growth and Characteristics of C8-BTBT Layer on C-Sapphire Substrate by Thermal Evaporation
Language en
Publication date 2018
Authors
Aye Myint Moh
Khoo, Pei Loon
Sasaki, Kimihiro
Watase, Seiji
Shinagawa, Tsutomu
Izaki, Masanobu
Description
The organic semiconductor 2,7-dioctyl[1] benzothieno [3,2-b][1] benzothiophene (C8-BTBT) is deposited on a single crystal (0001) Al2O3 (C-sapphire) by a vacuum thermal evaporation, and effects of the layer thickness and preparation temperature on structural, morphological, optical, and electrical characteristics are investigated with X-ray diffraction, atomic force microscopy observation, optical absorption measurement, and resistivity measurement with and without light irradiation. The C8-BTBT layers possess the (001) out-of-plane orientation irrespective of the layer thickness and preparation temperature. The C8-BTBT grains are growing up in direction parallel to the substrate surface keeping almost constant height, and the continuous layer is formed by the coalescence of the C8-BTBT grains. The grain size of the continuous C8-BTBT layer increases with raise in preparation temperature. The optical band gap energy could be estimated to be 3.32–3.35 eV regardless of the layer thickness and preparation temperature. The electrical resistivity decreases from 2.1x106 to 1.2x102Ωcm with increase in the preparation temperature due to the increase in the grain size, and the light irradiation induce the drastical decrease to 42–28Ωcm.
Keywords
C8-BTBT
Identifier https://uyr.uy.edu.mm/handle/123456789/626
Journal articles
Physics Status Solidi
Conference papaers
Books/reports/chapters
Thesis/dissertations
0
0
views
downloads
Views Downloads

Export

OAI-PMH
  • OAI-PMH DublinCore
Other Formats