{"_buckets": {"deposit": "9170af43-a250-4719-930a-b5f7d058f4f2"}, "_deposit": {"id": "1842", "owners": [], "pid": {"revision_id": 0, "type": "recid", "value": "1842"}, "status": "published"}, "_oai": {"id": "oai:meral.edu.mm:recid/1842", "sets": ["user-uy"]}, "communities": ["ccm", "ccp", "kyauksetu", "ltc", "maas", "miit", "mlmu", "mmu", "mtlu", "mtu", "mub", "mude", "mufl", "pathein", "scu", "suoe", "tcu", "tgu", "tuh", "tum", "ucsm", "ucsmtla", "ucsmub", "ucspathein", "ucstaungoo", "ucsy", "udmm", "udmy", "uit", "um", "um1", "um2", "umkn", "umm", "uphy", "urj", "uvs", "uy", "yau", "ydbu", "ytu", "yude", "yueco", "yufl", "yuoe"], "control_number": "1842", "item_1583103067471": {"attribute_name": "Title", "attribute_value_mlt": [{"subitem_1551255647225": "Fabrication of Pb(Zr,Ti)O3 Thin Film for Non-Volatile Memory Device Application", "subitem_1551255648112": "en"}]}, "item_1583103085720": {"attribute_name": "Description", "attribute_value_mlt": [{"interim": "Ferroelectric lead zirconate titanate powder was\r composed of mainly the oxides of titanium, zirconium and lead.\r PZT powder was firstly prepared by thermal synthesis at different\r Zr/Ti ratios with various sintering temperatures. PZT thin film was\r fabricated on SiO2/Si substrate by using thermal evaporation\r method. Physical and elemental analysis were carried out by using\r SEM, EDX and XRD The ferroelectric properties and the switching\r behaviour of the PZT thin films were investigated.The ferroelectric\r properties and switching properties of the PZT thin film (near\r morphotropic phase boundary sintered at 800ºC) could function as\r a nonvolatile memory."}]}, "item_1583103108160": {"attribute_name": "Keywords", "attribute_value_mlt": [{"interim": "lead zirconate titanate"}]}, "item_1583103120197": {"attribute_name": "Files", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_access", "date": [{"dateType": "Available", "dateValue": "2020-05-05"}], "displaytype": "preview", "download_preview_message": "", "file_order": 0, "filename": "Fabrication of Pb(Zr,Ti)O3 Thin Film for Non-Volatile.pdf", "filesize": [{"value": "552 Kb"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 552000.0, "url": {"url": "https://meral.edu.mm/record/1842/files/Fabrication of Pb(Zr,Ti)O3 Thin Film for Non-Volatile.pdf"}, "version_id": "d171a31c-0a2f-4b0f-b878-07b7006723c7"}]}, "item_1583103131163": {"attribute_name": "Journal articles", "attribute_value_mlt": [{}]}, "item_1583103147082": {"attribute_name": "Conference papaers", "attribute_value_mlt": [{}]}, "item_1583103211336": {"attribute_name": "Books/reports/chapters", "attribute_value_mlt": [{}]}, "item_1583103233624": {"attribute_name": "Thesis/dissertations", "attribute_value_mlt": [{"subitem_supervisor(s)": []}]}, "item_1583105942107": {"attribute_name": "Authors", "attribute_value_mlt": [{"subitem_authors": [{"subitem_authors_fullname": "Mar Lar Win"}]}]}, "item_1583108359239": {"attribute_name": "Upload type", "attribute_value_mlt": [{"interim": "Publication"}]}, "item_1583108428133": {"attribute_name": "Publication type", "attribute_value_mlt": [{"interim": "Journal article"}]}, "item_1583159729339": {"attribute_name": "Publication date", "attribute_value": "2016"}, "item_1583159847033": {"attribute_name": "Identifier", "attribute_value": "http://uyr.uy.edu.mm/handle/123456789/64"}, "item_title": "Fabrication of Pb(Zr,Ti)O3 Thin Film for Non-Volatile Memory Device Application", "item_type_id": "21", "owner": "1", "path": ["1582967549708"], "permalink_uri": "http://hdl.handle.net/20.500.12678/0000001842", "pubdate": {"attribute_name": "Deposited date", "attribute_value": "2020-03-05"}, "publish_date": "2020-03-05", "publish_status": "0", "recid": "1842", "relation": {}, "relation_version_is_last": true, "title": ["Fabrication of Pb(Zr,Ti)O3 Thin Film for Non-Volatile Memory Device Application"], "weko_shared_id": -1}