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  1. University of Yangon
  2. Department of Physics

Fabrication of Pb(Zr,Ti)O3 Thin Film for Non-Volatile Memory Device Application

http://hdl.handle.net/20.500.12678/0000001842
http://hdl.handle.net/20.500.12678/0000001842
88dd3a8a-94f1-4924-a414-30aa9f071db3
9170af43-a250-4719-930a-b5f7d058f4f2
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Fabrication Fabrication of Pb(Zr,Ti)O3 Thin Film for Non-Volatile.pdf (552 Kb)
Publication type
Journal article
Upload type
Publication
Title
Title Fabrication of Pb(Zr,Ti)O3 Thin Film for Non-Volatile Memory Device Application
Language en
Publication date 2016
Authors
Mar Lar Win
Description
Ferroelectric lead zirconate titanate powder was
composed of mainly the oxides of titanium, zirconium and lead.
PZT powder was firstly prepared by thermal synthesis at different
Zr/Ti ratios with various sintering temperatures. PZT thin film was
fabricated on SiO2/Si substrate by using thermal evaporation
method. Physical and elemental analysis were carried out by using
SEM, EDX and XRD The ferroelectric properties and the switching
behaviour of the PZT thin films were investigated.The ferroelectric
properties and switching properties of the PZT thin film (near
morphotropic phase boundary sintered at 800ºC) could function as
a nonvolatile memory.
Keywords
lead zirconate titanate
Identifier http://uyr.uy.edu.mm/handle/123456789/64
Journal articles
Conference papaers
Books/reports/chapters
Thesis/dissertations
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