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  1. University of Yangon
  2. Department of Physics

Effects of GaP Insertion Layer on the Properties of InP Nanostructures by Metal-Organic Vapor Phase Epitaxy

http://hdl.handle.net/20.500.12678/0000001766
http://hdl.handle.net/20.500.12678/0000001766
7c5ee681-ffb3-479b-a06a-bee6a6389596
f8808c96-1918-442d-8a0c-91c710e5957a
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Effects Effects of GaP Insertion Layer (URJ) by Dr.Soe Soe Han.pdf (432 Kb)
Publication type
Journal article
Upload type
Publication
Title
Title Effects of GaP Insertion Layer on the Properties of InP Nanostructures by Metal-Organic Vapor Phase Epitaxy
Language en
Publication date 2011
Authors
Soe Soe Han
Panyakeow, Somsak
Ratanathammaphan, Somchai
Higo, Akio
Yunpeng, Wang
Deura, Momoko
Sugiyama, Masakasu
Nakano, Yoshiaki
Description
The influence of thin GaP insertion layers (0 – 4) monolayers (MLs) on
the properties of InP self-assembled quantum dots (SAQDs) embedded in
In0.49Ga0.51P matrix on GaAs (001) substrate grown by metal-organic
vapor phase epitaxy was reported. In order to reduce the dots diameter
and improve the size uniformity and photoluminescence (PL) emission,
GaP layers thickness (0-4) monolayers (MLs) were inserted. The growth
of thin GaP insertion layer (IL) between In0.49Ga0.51P matrix and InP QDs
layer reduced the mean height and size fluctuation and increased the
density of InP QDs. The room-temperature (RT) PL emission could be
observed around 780 nm red spectral range. The blue-shift of the PL peak
was enhanced with thicker GaP insertion layer. The measurement of lowtemperature
(20 - 250 K) shows dependence of PL intensity on
temperature.
Keywords
InP
Identifier http://uyr.uy.edu.mm/handle/123456789/45
Journal articles
Conference papaers
Books/reports/chapters
Thesis/dissertations
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