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EFFECT OF THICKNESS OF GaP ULTRA-THIN INSERTION LAYER ON THE STRUCTURAL AND OPTICAL PROPERTIES OF lnP QUANTUM DOTS

http://hdl.handle.net/20.500.12678/0000001741
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88ea3d1e-dbde-4c40-80b8-65bcaaebf0ac
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Effect Effect of thickness of GaP ultra-thin insertion layer on the structural and optical properties of InP quantum dots.pdf (1675 Kb)
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Title
Title EFFECT OF THICKNESS OF GaP ULTRA-THIN INSERTION LAYER ON THE STRUCTURAL AND OPTICAL PROPERTIES OF lnP QUANTUM DOTS
Language en
Publication date 2009
Authors
Soe Soe Han
Panyakeow, Somsak
Rathanathamapan, Somchai
Description
A systematic study of thickness of Gal' insertion layers on the structural properties of InP quantum dots (QDs) was investigated. All samples were grown by conventional solid-source molecular beam epitaxy using a Gap decomposition cell was used as P2 source for P-based materials. The density of InP QDs directly grown on In0.48Gao.52P layer is 4.8x10-10 cm-2 , and decrease to 2.4-3.9x I0-10 cm-2 on GaP layers which depends on the thickness of GaP layer, The effect of GaP insertion layer on the size distribution of InP QDs is also studied in this work.
Identifier https://uyr.uy.edu.mm/handle/123456789/420
Journal articles
Proceedings of symposium 0 of the International Conference on Materials for Advanced Technologies (ICMAT)
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