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EFFECT OF THICKNESS OF GaP ULTRA-THIN INSERTION LAYER ON THE STRUCTURAL AND OPTICAL PROPERTIES OF lnP QUANTUM DOTS
http://hdl.handle.net/20.500.12678/0000001741
http://hdl.handle.net/20.500.12678/0000001741c2a434c1-f854-4805-a257-7dd5636a2aeb
88ea3d1e-dbde-4c40-80b8-65bcaaebf0ac
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Title | ||||||
Title | EFFECT OF THICKNESS OF GaP ULTRA-THIN INSERTION LAYER ON THE STRUCTURAL AND OPTICAL PROPERTIES OF lnP QUANTUM DOTS | |||||
Language | en | |||||
Publication date | 2009 | |||||
Authors | ||||||
Soe Soe Han | ||||||
Panyakeow, Somsak | ||||||
Rathanathamapan, Somchai | ||||||
Description | ||||||
A systematic study of thickness of Gal' insertion layers on the structural properties of InP quantum dots (QDs) was investigated. All samples were grown by conventional solid-source molecular beam epitaxy using a Gap decomposition cell was used as P2 source for P-based materials. The density of InP QDs directly grown on In0.48Gao.52P layer is 4.8x10-10 cm-2 , and decrease to 2.4-3.9x I0-10 cm-2 on GaP layers which depends on the thickness of GaP layer, The effect of GaP insertion layer on the size distribution of InP QDs is also studied in this work. | ||||||
Identifier | https://uyr.uy.edu.mm/handle/123456789/420 | |||||
Journal articles | ||||||
Proceedings of symposium 0 of the International Conference on Materials for Advanced Technologies (ICMAT) | ||||||
Conference papaers | ||||||
Books/reports/chapters | ||||||
Thesis/dissertations |