{"created":"2020-03-08T23:45:20.122457+00:00","id":2642,"links":{},"metadata":{"_buckets":{"deposit":"8699e588-6721-4842-8067-40be0402ddce"},"_deposit":{"id":"2642","owners":[],"pid":{"revision_id":0,"type":"recid","value":"2642"},"status":"published"},"_oai":{"id":"oai:meral.edu.mm:recid/2642","sets":["1582963390870:1582967549708"]},"communities":["ccm","ccp","kyauksetu","ltc","maas","miit","mlmu","mmu","mtlu","mtu","mub","mude","mufl","pathein","scu","suoe","tcu","tgu","tuh","tum","ucsm","ucsmtla","ucsmub","ucspathein","ucstaungoo","ucsy","udmm","udmy","uit","um","um1","um2","umkn","umm","uphy","urj","uvs","uy","yau","ydbu","ytu","yude","yueco","yufl","yuoe"],"control_number":"2642","item_1583103067471":{"attribute_name":"Title","attribute_value_mlt":[{"subitem_1551255647225":"Fabrication and Characteristics of SnO2/PZT/SiO2/p-Si Ferroelectric Memory Structure","subitem_1551255648112":"en"}]},"item_1583103085720":{"attribute_name":"Description","attribute_value_mlt":[{"interim":"Metal-Ferroelectric-Insulator-Semiconductor\r Structures are fabricated and characterized by using\r Pb(Zr,Ti)O3(PZT)and SnO2 layers. Ferroelectric PZT layers are\r formed on SiO2/p-Si by the spray method and SnO2 layers are\r deposited on PZT/SiO2/ p-Si structure by spinning technique.\r The capacitance-voltage(C-V) characteristics of the\r SnO2/PZT/SiO2/p-Si structure exhibit a hysteresis loop due to the\r ferroelectricity of the PZT layer. In the memory behaviour\r described in this paper, the transistor itself has memory; the\r transistor is capable of storing one bit of information."}]},"item_1583103108160":{"attribute_name":"Keywords","attribute_value_mlt":[{"interim":" "}]},"item_1583103120197":{"attribute_name":"Files","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","date":[{"dateType":"Available","dateValue":"2020-05-05"}],"displaytype":"preview","filename":"Fabrication and Characteristics (Thanda).pdf","filesize":[{"value":"283 Kb"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"url":"https://meral.edu.mm/record/2642/files/Fabrication and Characteristics (Thanda).pdf"},"version_id":"4b618cd1-8048-48d4-a347-27feeb783c28"}]},"item_1583103131163":{"attribute_name":"Journal articles","attribute_value_mlt":[{}]},"item_1583103147082":{"attribute_name":"Conference papaers","attribute_value_mlt":[{}]},"item_1583103211336":{"attribute_name":"Books/reports/chapters","attribute_value_mlt":[{}]},"item_1583103233624":{"attribute_name":"Thesis/dissertations","attribute_value_mlt":[{"subitem_supervisor(s)":[]}]},"item_1583105942107":{"attribute_name":"Authors","attribute_value_mlt":[{"subitem_authors":[{"subitem_authors_fullname":"Thanda"}]}]},"item_1583108359239":{"attribute_name":"Upload type","attribute_value_mlt":[{"interim":"Publication"}]},"item_1583108428133":{"attribute_name":"Publication type","attribute_value_mlt":[{"interim":"Journal article"}]},"item_1583159729339":{"attribute_name":"Publication date","attribute_value":"2016"},"item_1583159847033":{"attribute_name":"Identifier","attribute_value":"http://uyr.uy.edu.mm/handle/123456789/55"},"item_title":"Fabrication and Characteristics of SnO2/PZT/SiO2/p-Si Ferroelectric Memory Structure","item_type_id":"21","owner":"1","path":["1582967549708"],"publish_date":"2020-03-05","publish_status":"0","recid":"2642","relation_version_is_last":true,"title":["Fabrication and Characteristics of SnO2/PZT/SiO2/p-Si Ferroelectric Memory Structure"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2021-12-13T04:57:17.437488+00:00"}