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Fabrication and Characteristics of SnO2/PZT/SiO2/p-Si Ferroelectric Memory Structure
http://hdl.handle.net/20.500.12678/0000002642
http://hdl.handle.net/20.500.12678/00000026427eac0ae8-3b08-46ba-8872-357137aeb507
8699e588-6721-4842-8067-40be0402ddce
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Title | Fabrication and Characteristics of SnO2/PZT/SiO2/p-Si Ferroelectric Memory Structure | |||||
Language | en | |||||
Publication date | 2016 | |||||
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Thanda | ||||||
Description | ||||||
Metal-Ferroelectric-Insulator-Semiconductor Structures are fabricated and characterized by using Pb(Zr,Ti)O3(PZT)and SnO2 layers. Ferroelectric PZT layers are formed on SiO2/p-Si by the spray method and SnO2 layers are deposited on PZT/SiO2/ p-Si structure by spinning technique. The capacitance-voltage(C-V) characteristics of the SnO2/PZT/SiO2/p-Si structure exhibit a hysteresis loop due to the ferroelectricity of the PZT layer. In the memory behaviour described in this paper, the transistor itself has memory; the transistor is capable of storing one bit of information. |
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Identifier | http://uyr.uy.edu.mm/handle/123456789/55 | |||||
Journal articles | ||||||
Conference papaers | ||||||
Books/reports/chapters | ||||||
Thesis/dissertations |