2024-03-28T14:27:00Z
https://meral.edu.mm/oai
oai:meral.edu.mm:recid/2663
2022-03-24T23:14:31Z
1582963390870:1582967549708
user-uy
Growth, Optical and Structural Characterization of InP Nanostructures with In0.4Ga0.6P Insertion Layer
Soe Soe Han
Panyakeow, Somsak
Ratanathammaphan, Somchai
Higo, Akio
Wang, Yunpeng
Deura, Momoko
Sugiyama, Masakasu
Nakano, Yoshiaki
Quantum dots in InP/GaAs system were grown by low pressure MOVPE via the StranskiKrastanow
growth mode. In order to control the dots diameter and improve the size uniformity and
photoluminescence (PL) emission, the ternary In0.4Ga0.6P layers thickness (0-4) monolayers (MLs)
were inserted. The growth of thin In0.4Ga0.6P insertion layers between In0.49Ga0.51P matrix and InP
QD layers reduced the mean height and size fluctuation and significantly improved the uniformity
of InP QDs. A higher QDs PL intensity, better uniformity and smaller QDs size had been achieved
at 2 ML thickness InGaP insertion layer. The PL emission could be observed around 780 nm red
spectral range. There was no blue-shift with increase of the In0.4Ga0.6P insertion layer thickness.
2016
http://hdl.handle.net/20.500.12678/0000002663
https://meral.edu.mm/records/2663