2024-03-29T08:34:45Z
https://meral.edu.mm/oai
oai:meral.edu.mm:recid/2642
2021-12-13T04:57:17Z
1582963390870:1582967549708
user-uy
Fabrication and Characteristics of SnO2/PZT/SiO2/p-Si Ferroelectric Memory Structure
Thanda
Metal-Ferroelectric-Insulator-Semiconductor
Structures are fabricated and characterized by using
Pb(Zr,Ti)O3(PZT)and SnO2 layers. Ferroelectric PZT layers are
formed on SiO2/p-Si by the spray method and SnO2 layers are
deposited on PZT/SiO2/ p-Si structure by spinning technique.
The capacitance-voltage(C-V) characteristics of the
SnO2/PZT/SiO2/p-Si structure exhibit a hysteresis loop due to the
ferroelectricity of the PZT layer. In the memory behaviour
described in this paper, the transistor itself has memory; the
transistor is capable of storing one bit of information.
2016
http://hdl.handle.net/20.500.12678/0000002642
https://meral.edu.mm/records/2642