2026-04-30T03:14:33Z https://meral.edu.mm/oai

oai:meral.edu.mm:recid/2986 2021-12-13T00:31:42Z 1582963492007:1595850252716 user-yuoe

Studies on La DOPED Fe2O3 Ferroelectric Thin Film Capacitors for Memory Device Applications Nu Nu Swe Ferroelectric memory devices of MFS design with La doped Fe0, thin films, with different concentrations from x = 0.02 mol% to 0.1 mole % are prepared by new liquid phase epitaxial route in which the substrate temperature was kept at 600°C for 1 hr. Current versus voltage characteristics, electric polarization versus electric field characteristics and transient current versus time characteristics of thin film capacitors are analysed. From detail analysis of the characteristics curves and their present results in this research work implies that the fabricated devices in all cases can be applied to nonvolatile memory devices. Particularly, ferroelectric field effect transistor (FeFET), ferroelectric memory diode (FMD) and ferroelectric random access memory (FeRAM) applications, have the bright future. 2005-04-05 http://hdl.handle.net/20.500.12678/0000002986 https://meral.edu.mm/records/2986