2026-06-24T04:50:31Z https://meral.edu.mm/oai

oai:meral.edu.mm:recid/2980 2021-12-13T00:31:38Z 1582963492007:1595850252716 user-yuoe

Influence of La-Composition in Ferroelectric Properties of Fe2O3 Thin Film Capacitors Nu Nu Swe Aye Moe Soe Kyaw Aung Win Yin Maung Maung Ko Ko Kyaw Soe Ferroelectric memory devices of MFS design with La doped Fe2O3 thin films x=0.02 mol% to 0.1 mol% prepared by new liquid phase epitaxial route at the substrate temperature of 600˚C were investigated. Various electrical parameters such as ideality factor and zero-bias barrier height were evaluated by the detail analysis of LnI-V characteristics. 2005-10-12 http://hdl.handle.net/20.500.12678/0000002980 https://meral.edu.mm/records/2980