2026-06-28T03:52:18Z https://meral.edu.mm/oai

oai:meral.edu.mm:recid/2467 2021-12-13T01:03:21Z 1582963390870:1582967549708 user-uy

Drain and Transfer Characteristics of Al (6 mol %) Doped PbTiO3 Thin Film Transistor May Aye Khaing Pwint Yee Thein Than Than Win Yin Maung Maung Ko Ko Kyaw Soe Al doped PbTiO3 powder was firstly prepared by high temperature solid state reaction route. Structural and microstructural analysis were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM)). Fabrication process of a single-transistor type ferroelectric field effect transistor (1TFeFET) memory with PbTi(1-x)Al(x)O3 (PTA) films had been carried out. Electrical characteristics (drain & transfer) of all films were measured. According to the experimental results the laboratory-prepared transistors were utilized for 1T of NVFRAM. 2016 http://hdl.handle.net/20.500.12678/0000002467 https://meral.edu.mm/records/2467