2026-07-27T00:23:53Z https://meral.edu.mm/oai

oai:meral.edu.mm:recid/2372 2021-12-13T02:45:42Z 1582963390870:1582967549708 user-uy

Effect of GaP and GaP/InGaP insertion layers on the structural and optical properties of InP quantum dots grown by metal-organic vapor phase epitaxy Soe Soe Han Higo, A. Yunpeng, W. Deura, M. Sugiyama, M. Nakano, Y. Panyakeow, S. A comparison of ultra-thin insertion layers (GaP and GaP/In0.4Ga0.6P) on InP self-assembled quantum dots (SAQDs) grown on GaAs (0 0 1) substrates using metal-organic vapor phase epitaxy (MOVPE) was studied. Atomic force microscopy (AFM) and photoluminescence (PL) were employed to characterize the optical and structural properties of the grown InP QDs. It is found that the QD dimension, size distribution and density strongly depend on the insertion layer thickness which led to tune the emission wavelength and narrowing of full width at half maximum (FWHM) at low temperature (20–250 K) and at room-temperature PL measurements. This result is attributed to the improved QD size and quantum confinement effect arising from the insertion of the GaP and GaP/In0.4Ga0.6P layers. 2013 http://hdl.handle.net/20.500.12678/0000002372 https://meral.edu.mm/records/2372