2026-06-25T06:07:08Z https://meral.edu.mm/oai

oai:meral.edu.mm:recid/2284 2021-12-13T00:45:47Z 1582963390870:1582967549708 user-uy

Electrical Properties of Zn1-xCuxO/Si Thin Film Min Maung Maung Aye Myat Minn As a wide band semiconductor with a large binding energy (about 60 meV) ZnO is a promising candidate semiconductor material for the next generation of optoelectronic light emission or high power and high frequency devices. Zn1-xCuxO films have been grown on Si substrate by using Thermal diffusion method. The structural properties of these films were examined by XRD. The electrical properties of these thin films are also described. In these research work, quantum yield, fill factor (Ff) and conversion efficiency (ηcon) are evaluated at different light intensities. 2008 http://hdl.handle.net/20.500.12678/0000002284 https://meral.edu.mm/records/2284