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        <identifier>oai:meral.edu.mm:recid/2269</identifier>
        <datestamp>2021-12-13T02:16:14Z</datestamp>
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          <dc:title>Growth of Sol-Gel Derived Lead Titanate Thin Film for Non-Volatile Memory Device Application</dc:title>
          <dc:creator>Khin Moe Thant</dc:creator>
          <dc:creator>Yin Maung Maung</dc:creator>
          <dc:description>Sol-gel derived lead titanate transparent sol is firstly prepared from lead acetate trihydrate and titanium isopropoxide as starting materials. It is refluxed with Oil-bath at 110ºC for 6 h and lead titanate sol-gel is formed. Dynamic viscosity measurement is carried out by viscometer. The precursor sol is deposited on defect-free and highly polished p-Si substrate by local-made spin -coating machine. Scanning Electron Microscopy (SEM) analysis is carried out to examine the microstructural properties of fabricated film. Before the contact process, front and counter metallizations are done. 100 kHz C-V characteristics is observed by LCR meter (Digital Impedance Analyzar: Quch Tech: 1730) and gives the memory function. 100 kHz P-E hysteresis loop is also measured by Sawyer - Tower circuit. Hysteresis parameters such as spontaneous polarization density, remanent polarization density and coercive field are evaluated.</dc:description>
          <dc:date>2008</dc:date>
          <dc:identifier>http://hdl.handle.net/20.500.12678/0000002269</dc:identifier>
          <dc:identifier>https://meral.edu.mm/records/2269</dc:identifier>
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