<?xml version='1.0' encoding='UTF-8'?>
<OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd">
  <responseDate>2026-07-28T20:21:51Z</responseDate>
  <request verb="GetRecord" identifier="oai:meral.edu.mm:recid/1984" metadataPrefix="oai_dc">https://meral.edu.mm/oai</request>
  <GetRecord>
    <record>
      <header>
        <identifier>oai:meral.edu.mm:recid/1984</identifier>
        <datestamp>2021-12-13T03:05:39Z</datestamp>
        <setSpec>1582963390870:1582967549708</setSpec>
        <setSpec>user-uy</setSpec>
      </header>
      <metadata>
        <oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns="http://www.w3.org/2001/XMLSchema" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
          <dc:title>Ferroelectric Properties of Nanoscale PbTiO3 Films by Hydrothermal Method</dc:title>
          <dc:creator>Htet Htet Nwe</dc:creator>
          <dc:creator>Than Than Win</dc:creator>
          <dc:creator>Yin Maung Maung</dc:creator>
          <dc:creator>Ko Ko Kyaw Soe</dc:creator>
          <dc:description>Lead (II) nitride (Pb(NO3)2), titanium dioxide&#13; (TiO2) and potassium hydroxide (KOH) were used as&#13; starting materials. Lead titanate powder was formed by&#13; hydrothermal method at 150 C for 6h. The calcuim&#13; fluoride (CaF2) and titanium dioxide (TiO2) were&#13; separately adapted as intermediate layer on p-Si (100)&#13; substrate. Lead titanate thin film was formed onto&#13; CaF2/Si and TiO2/Si substrates by spin processor.&#13; 100kHz C-V characteristics of PbTiO3 films were&#13; measured by impedance analyzer (LCR meter).&#13; Polarization-electric field (P-E) characteristics were&#13; measured for both MFIS (Metal/ Ferroelectric/&#13; Insulator/ Semiconductor) structures by applying the&#13; same triangular wave electric field in order to allow their&#13; application in NVFRAM (Non Volatile Ferroelectric&#13; Random Access Memory).</dc:description>
          <dc:date>2016</dc:date>
          <dc:identifier>http://hdl.handle.net/20.500.12678/0000001984</dc:identifier>
          <dc:identifier>https://meral.edu.mm/records/1984</dc:identifier>
        </oai_dc:dc>
      </metadata>
    </record>
  </GetRecord>
</OAI-PMH>
