2026-04-15T00:28:16Z https://meral.edu.mm/oai

oai:meral.edu.mm:recid/1842 2021-12-13T01:51:59Z 1582963390870:1582967549708 user-uy

Fabrication of Pb(Zr,Ti)O3 Thin Film for Non-Volatile Memory Device Application Mar Lar Win Ferroelectric lead zirconate titanate powder was composed of mainly the oxides of titanium, zirconium and lead. PZT powder was firstly prepared by thermal synthesis at different Zr/Ti ratios with various sintering temperatures. PZT thin film was fabricated on SiO2/Si substrate by using thermal evaporation method. Physical and elemental analysis were carried out by using SEM, EDX and XRD The ferroelectric properties and the switching behaviour of the PZT thin films were investigated.The ferroelectric properties and switching properties of the PZT thin film (near morphotropic phase boundary sintered at 800ºC) could function as a nonvolatile memory. 2016 http://hdl.handle.net/20.500.12678/0000001842 https://meral.edu.mm/records/1842