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  <responseDate>2026-08-24T02:29:39Z</responseDate>
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      <header>
        <identifier>oai:meral.edu.mm:recid/00009447</identifier>
        <datestamp>2024-05-06T04:22:06Z</datestamp>
        <setSpec>1582963390870:1582967549708</setSpec>
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      <metadata>
        <oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns="http://www.w3.org/2001/XMLSchema" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
          <dc:title>Electrical Characteristics of Ge-Ag Semiconductor Diode</dc:title>
          <dc:creator>Ohn Mar Swe</dc:creator>
          <dc:creator>Zin Mar Win</dc:creator>
          <dc:creator>Khine Khine Linn</dc:creator>
          <dc:creator>May Kalayar Kyaing</dc:creator>
          <dc:creator>Amy Aung5</dc:creator>
          <dc:description>Abstract
The group I element of silver (Ag) was deposited on group IV element of n-type germanium
(n-Ge) substrate at various heating temperatures of 700ºC, 800ºC and 900ºC. The metal
semiconductor junction is formed. I-V characteristics of Ge-Ag diodes without illumination and
with illumination were measured.</dc:description>
          <dc:date>2022-12-31</dc:date>
          <dc:identifier>https://meral.edu.mm/records/9447</dc:identifier>
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