<?xml version='1.0' encoding='UTF-8'?>
<OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd">
  <responseDate>2026-10-23T03:56:34Z</responseDate>
  <request verb="GetRecord" identifier="oai:meral.edu.mm:recid/00007765" metadataPrefix="oai_dc">https://meral.edu.mm/oai</request>
  <GetRecord>
    <record>
      <header>
        <identifier>oai:meral.edu.mm:recid/00007765</identifier>
        <datestamp>2021-12-13T00:39:02Z</datestamp>
        <setSpec>1608242063591</setSpec>
        <setSpec>1608242063591:1608715460334</setSpec>
        <setSpec>user-mtlu</setSpec>
      </header>
      <metadata>
        <oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns="http://www.w3.org/2001/XMLSchema" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
          <dc:title>Structural and Electrical Properties of Fluorine Doped Nanocrystalline Tin Oxide Thin Film</dc:title>
          <dc:creator>Khin Moh Moh Hlaing, Dr</dc:creator>
          <dc:creator>Hlaing Hlaing Oo, Dr</dc:creator>
          <dc:creator>Ni Ni Aung, Dr</dc:creator>
          <dc:creator>Mya Hinn Aye Khaing, Dr</dc:creator>
          <dc:description>The application of thin film technology is entirely entered into all branches of science and technology. Fluorine doped tin oxide thin films belong to a special class of metal oxide thin film, nanostructure thin film solar cell.  Fluorine doped tin oxide thin films prepared on glass substrate by sol-gel dip-coating method. The effect of dopant concentration of ammonium fluoride and heat treatment temperature of SnO2:F films on structural, surface morphology and electrical properties were investigated. The X-ray diffraction analysis of all SnO2:F films indicated the tetragonal structure of tin oxide with polycrystalline nature. The SEM micrographs of the SnO2:F films showed tetragonal crystal structure (flower like shape) and uniform surface pattern, at the optimized heat treated temperature  400 ºC. The best results were obtained the doping concentration of 7.5 % w/w ammonium fluoride at the heat treated temperature 400 ºC with the electrical resistance of 3.71 Ωsq-1 .</dc:description>
          <dc:date>2020-08-31</dc:date>
          <dc:identifier>http://hdl.handle.net/20.500.12678/0000007765</dc:identifier>
          <dc:identifier>https://meral.edu.mm/records/7765</dc:identifier>
        </oai_dc:dc>
      </metadata>
    </record>
  </GetRecord>
</OAI-PMH>
