2026-04-30T15:19:48Z https://meral.edu.mm/oai

oai:meral.edu.mm:recid/00007361 2022-03-24T23:13:24Z 1607987483594 1607987483594:1608056914776 user-tuh

Analysis on Physical Characteristics of β-Ga2O3 for Schottky Barrier Diode Based Metal-Semiconductor Hlaing Hlaing Thin Than Htike Aung Tin Tin Hla The paper presents the analysis on physical characteristics of potential metal-semiconductor belta-gallium oxide (β-Ga2O3) material for Schottky barrier diode based on physical parameters. The β-Ga2O3 is one of the candidates to fabricate the Schottky barrier diode for obtaining the high performance characteristics in nature. The electron and hole concentrations, energy band-gap via temperature, breakdown electric field relationship with bandgap, J-V characteristic and breakdown voltage via doping concentration are very important physical parameters for device design. In this paper, the physical characteristics for electrical parameters for fabricating β-Ga2O3 metal-semiconductor devices are confirmed. The research finding shows that β-Ga2O3 is more suitable for power electronic devices than the other materials because it has wide bandgap, high breakdown electric field and high breakdown voltage. 2019-11-07 http://hdl.handle.net/20.500.12678/0000007361 https://meral.edu.mm/records/7361