2026-04-15T19:46:06Z https://meral.edu.mm/oai

oai:meral.edu.mm:recid/00007275 2022-03-24T23:11:23Z 1607987483594 1607987483594:1608056914776 user-tuh

Analysis on Electrical Characteristics of Gallium Nitride (GaN) Material for Schottky Barrier Based Photodetectors Wah Wah Kyw Ohnmar Win Tin Tin Hla This paper presents the design of a self-powered photodetector based on metal-GaN (Schottky barrier). The Schottky structure is a common structure used in wide bandgap semiconductor UV detectors. The design of Schottky barrier photodetector consists of a semitransparent Schottky contact and an Ohmic contact. Solar blind ultraviolet photodetector is mainly focoused in this research. In reality, AlGaN is suitable for solar blind ultraviolet photodetector. However, GaN is tested with various metals in this paper. Semiconductor materials are an important part of modern electronics devices for detectors, diodes, LEDs, solar cells, digital and analog ICs. GaN is the most desirable candidates for UV light detection. The simulation results of the varying energy band-gap, the electron and hole concentration and the height of Schottky barrier have been completed with the help of MATLAB. 2019-11-07 http://hdl.handle.net/20.500.12678/0000007275 https://meral.edu.mm/records/7275